Kyung Jin Lee

TL;DR: In this paper, a model based on the Boltzmann equation that unifies these approaches is presented. But the model fails to describe the experimentally observed thickness dependencies, which is a limitation of the drift-diffusion model.

TL;DR: The antiferromagnetic IrMn layer supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field, and together with sizeable spin-orbit torques, these features make antiferromeagnets a promising candidate for future spintronic devices.

TL;DR: In this paper, the authors demonstrate that ultrathin ferromagnetic Pt/Co/Pt films with perpendicular magnetic anisotropy exhibit a sizable Dzyaloshinskii-Moriya interaction (DMI) effect.

TL;DR: This finding allows the physics of antiferromagnetic spin dynamics to be investigated and highlights the importance of tuning of the angular momentum compensation point of ferrimagnets, which could be a key towards ferrimagnetic spintronics.

TL;DR: This Perspective discusses the opportunities that arise from synthetic antiferromagnets consisting of two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and have antiparallel magnetizations.