Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TLDR
In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.Abstract:
The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which include high responsivity from visible to near-infrared wavelengths, high bandwidths and compatibility with silicon complementary metal–oxide–semiconductor circuits, these devices can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and infrared imaging at low cost and low power consumption. This Review summarizes the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors. Owing to their excellent optoelectronic properties, Ge-on-Si photodetector can be monolithically integrated with silicon-based read-out circuits for applications such as high-performance photonic data links and low-cost infrared imaging at low power consumption. This Review covers the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Ge-on-Si avalanche photodetectors.read more
Citations
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Journal ArticleDOI
Alternative Plasmonic Materials: Beyond Gold and Silver
TL;DR: This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskiteOxides, metal nitrides, silicides, germanides, and 2D materials such as graphene.
Journal ArticleDOI
Mid-infrared photonics in silicon and germanium
TL;DR: In this article, the authors proposed a method to extend group IV photonics from near-infrared to midinfrared wavelengths using on-chip CMOS optoelectronic systems for use in spectroscopy, chemical and biological sensing, and free space communications.
Journal ArticleDOI
Chip-integrated ultrafast graphene photodetector with high responsivity
Xuetao Gan,Ren-Jye Shiue,Yuanda Gao,Inanc Meric,Tony F. Heinz,Kenneth L. Shepard,James Hone,Solomon Assefa,Dirk Englund,Dirk Englund +9 more
TL;DR: In this article, a chip-integrated graphene photodetector with a high responsivity of over 0.1 A W−1, high speed and broad spectral bandwidth is realized through enhanced absorption due to near-field coupling.
Journal ArticleDOI
Advances in quantum cryptography
Stefano Pirandola,Ulrik L. Andersen,Leonardo Banchi,Mario Berta,Darius Bunandar,Roger Colbeck,Dirk Englund,Tobias Gehring,Cosmo Lupo,Carlo Ottaviani,Jason Pereira,Mohsen Razavi,Jesni Shamsul Shaari,Marco Tomamichel,Vladyslav C. Usenko,Giuseppe Vallone,Paolo Villoresi,Petros Wallden +17 more
TL;DR: This review begins by reviewing protocols of quantum key distribution based on discrete variable systems, and considers aspects of device independence, satellite challenges, and high rate protocols based on continuous variable systems.
Journal ArticleDOI
Nonreciprocal Light Propagation in a Silicon Photonic Circuit
Liang Feng,Liang Feng,Maurice Ayache,Jingqing Huang,Ye-Long Xu,Ming-Hui Lu,Yan-Feng Chen,Yeshaiahu Fainman,Axel Scherer +8 more
TL;DR: A metallic-silicon waveguide system in which the optical potential is modulated along the length of the waveguide such that nonreciprocal light propagation is obtained on a silicon photonic chip is designed and fabricated.
References
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Journal ArticleDOI
Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).
TL;DR: The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscope and a metastable 3D cluster phase with well-defined structure and shape is found.
Journal ArticleDOI
High-quality Ge epilayers on Si with low threading-dislocation densities
Hsin-Chiao Luan,Desmond R. Lim,Kevin K. Lee,Kevin M. Chen,Jessica G. Sandland,Kazumi Wada,Lionel C. Kimerling +6 more
TL;DR: In this paper, a two-step ultrahigh vacuum/chemical-vapor-deposition process followed by cyclic thermal annealing was proposed for making high-quality epilayers on Si.
Journal ArticleDOI
Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
Liang Tang,Şükrü Ekin Kocabaş,S. Latif,Ali Kemal Okyay,Dany-Sebastien Ly-Gagnon,Krishna C. Saraswat,David A. B. Miller +6 more
TL;DR: In this paper, the authors exploit the idea of a half-wave Hertz dipole antenna at near-infrared wavelengths to concentrate radiation into a nanometre-scale germanium photodetector.
Journal ArticleDOI
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
TL;DR: In this paper, a method of controlling threading dislocation densities in Ge on Si involving graded SiGe layers and chemical-mechanical polishing (CMP) is presented.
Journal ArticleDOI
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Yimin Kang,Han-Din Liu,Han-Din Liu,Mike Morse,Mario J. Paniccia,Moshe Zadka,Stas Litski,Gadi Sarid,Alexandre Pauchard,Ying-Hao Kuo,Hui-Wen Chen,Wissem Sfar Zaoui,John E. Bowers,Andreas Beling,Dion McIntosh,Xiaoguang Zheng,Joe C. Campbell +16 more
TL;DR: In this paper, the authors reported a monolithically grown germanium/silicon avalanche photodetector with a gain-bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of −28 dBm at 10Gb s−1.