Luis A. Lastras

TL;DR: In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials.

TL;DR: Start-Gap is proposed, a simple, novel, and effective wear-leveling technique that uses only two registers that boosts the achievable lifetime of the baseline 16 GB PCM-based system from 5% to 97% of the theoretical maximum, while incurring a total storage overhead of less than 13 bytes and obviating the latency overhead of accessing large tables.

TL;DR: This paper proposes PreSET, an architectural technique that leverages the fundamental property of PCM devices that writes are slow only in one direction and are almost as fast as reads in the other direction and reduces effective read latency from 982 cycles to 594 cycles and increases system performance by 34%, while improving the energy-delay-product by 25%.

TL;DR: A practical wear-leveling framework that can provide years of lifetime under attacks while still incurring negligible (<1%) write overhead for typical applications is proposed.

TL;DR: In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly-conductive crystalline states in so-called phase change materials.