Phase change memory technology
Geoffrey W. Burr,Matthew J. Breitwisch,Michele M. Franceschini,Davide Garetto,Kailash Gopalakrishnan,Bryan L. Jackson,B. N. Kurdi,Chung H. Lam,Luis A. Lastras,Alvaro Padilla,Bipin Rajendran,Simone Raoux,Rohit S. Shenoy +12 more
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In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials.Abstract:
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance, and yield characteristics. They introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. Challenges for the technology are addressed, including the design of PCM cells for low reset current, the need to control device-to-device variability, and undesirable changes in the phase change material that c...read more
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Journal ArticleDOI
Phase Change Memory
H P Wong,S Raoux,Sangbum Kim,Jiale Liang,J P Reifenberg,Bipin Rajendran,Mehdi Asheghi,Kenneth E. Goodson +7 more
TL;DR: The physics behind this large resistivity contrast between the amorphous and crystalline states in phase change materials is presented and how it is being exploited to create high density PCM is described.
Journal ArticleDOI
Nanoscale thermal transport. II. 2003–2012
David G. Cahill,Paul V. Braun,Gang Chen,David R. Clarke,Shanhui Fan,Kenneth E. Goodson,Pawel Keblinski,William P. King,Gerald D. Mahan,Arun Majumdar,Humphrey J. Maris,Simon R. Phillpot,Eric Pop,Li Shi +13 more
TL;DR: In this article, a review of thermal transport at the nanoscale is presented, emphasizing developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field.
Journal ArticleDOI
NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory
TL;DR: NVSim is developed, a circuit-level model for NVM performance, energy, and area estimation, which supports various NVM technologies, including STT-RAM, PCRAM, ReRAM, and legacy NAND Flash and is expected to help boost architecture-level NVM-related studies.
Damascene copper electroplating for chip interconnections
TL;DR: Damascene copper electroplating for on-chip interconnections, a process that was conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition as discussed by the authors.
Patent
Phase-change memory
TL;DR: In this paper, recent progress of phase change memory (PCM) is reviewed and innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3D, multilayer high-density memory arrays are described.
References
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Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
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