M
M. Gorni
Researcher at University of Parma
Publications - 6
Citations - 37
M. Gorni is an academic researcher from University of Parma. The author has contributed to research in topics: Doping & Annealing (metallurgy). The author has an hindex of 3, co-authored 6 publications receiving 33 citations.
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Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
TL;DR: In this paper, the authors highlighted the processing parameters that favour the onset of an impurity band conduction around room temperature with a contemporaneous elevated p-type conductivity in Al+ implanted 4H-SiC.
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1950°C Post Implantation Annealing of Al+ Implanted 4H-SiC: Relevance of the Annealing Time
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High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC
TL;DR: In this article, the authors confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5× 1020 cm 3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing.
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Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures
TL;DR: In this article, an attempt to explain the formation of the buried junction in terms of atomic interdiffusion is provided, in order to justify, from a microscopic point of view, the low diffusivity of Zn in GaSb, and the depth of the p-n junction interface in the substrate.
Journal ArticleDOI
Ion implanted phosphorous for 4h-sic vdmosfets source regions: effect of the post implantation annealing time
Roberta Nipoti,Antonella Parisini,Virginia Boldrini,Salvatore Vantaggio,M. Gorni,Mariaconcetta Canino,Giulio Pizzochero,Massimo Camarda,Judith Woerle,Ulrike Grossner +9 more
TL;DR: In this paper, double ion implantation processes, namely P+ and Al+ co-implantation, have been described, and the post implantation annealing temperature was 1600 °C.