M
Massimo Camarda
Researcher at Paul Scherrer Institute
Publications - 10
Citations - 84
Massimo Camarda is an academic researcher from Paul Scherrer Institute. The author has contributed to research in topics: Thermal oxidation & Silicon carbide. The author has an hindex of 4, co-authored 10 publications receiving 47 citations. Previous affiliations of Massimo Camarda include ETH Zurich.
Papers
More filters
Journal ArticleDOI
Two-dimensional defect mapping of the SiO 2 /4 H −SiC interface
Judith Woerle,Judith Woerle,Brett C. Johnson,Corrado Bongiorno,Kohei Yamasue,Gabriel Ferro,Dipanwita Dutta,Thomas A. Jung,Hans Sigg,Yasuo Cho,Ulrike Grossner,Massimo Camarda,Massimo Camarda +12 more
TL;DR: In this article, the authors report measurements on intentionally modified 4H-SiC surfaces exhibiting both atomically flat and stepped regions where the generation of interface defects can be directly linked to differences in surface roughness.
Journal ArticleDOI
Silicon carbide X-ray beam position monitors for synchrotron applications
Selamnesh Nida,Alexander Tsibizov,Thomas Ziemann,Judith Woerle,Judith Woerle,Andy Moesch,Clemens Schulze-Briese,Claude Pradervand,Salvatore Tudisco,Hans Sigg,Oliver Bunk,Ulrike Grossner,Massimo Camarda,Massimo Camarda +13 more
TL;DR: The viability of thin 4H-SiC membrane X-ray beam position monitors in synchrotrons is investigated and devices are fabricated and show improved linearity, dynamics and signal-to-noise ratio compared with commercial polycrystalline diamond X-raysbeam position monitors.
Journal ArticleDOI
Optically Active Defects at the Si C / Si O 2 Interface
Brett C. Johnson,Judith Woerle,Judith Woerle,D. Haasmann,C. T.-K. Lew,R. A. Parker,Helena S. Knowles,Helena S. Knowles,Benjamin Pingault,Mete Atatüre,Adam Gali,Adam Gali,S. Dimitrijev,Massimo Camarda,Massimo Camarda,Jeffrey C. McCallum +15 more
TL;DR: In this paper, the defect density of the SiC/SiO2 interface was investigated by varying the parameters of a nitric oxide passivation anneal after oxidation, which is used to evaluate the quality of SiC and SiO2 interfaces.
Journal ArticleDOI
Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES
Judith Woerle,Judith Woerle,Federico Bisti,Marius-Adrian Husanu,Vladimir N. Strocov,Christof W. Schneider,Hans Sigg,Jens Gobrecht,Ulrike Grossner,Massimo Camarda +9 more
TL;DR: In this paper, the electronic structure of the SiO2/SiC interface was explored using soft X-ray angle-resolved photoemission spectroscopy with photon energies between 350 and 1000
Journal ArticleDOI
4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
V. Souliere,Davy Carole,Massimo Camarda,Judith Woerle,Ulrike Grossner,Olivier Dezellus,Gabriel Ferro +6 more
TL;DR: In this article, the authors found conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a 4H-SiC seed without the need of any SiC deposition.