M. J. Ludowise

TL;DR: In this article, the authors describe the current state of high-power LED technology and the challenges that lay ahead for development of a true "solid state lamp" and demonstrate record performance and reliability for high power colored and white LEDs and show results from the worlds first 100-plus lumen white LED lamp.

TL;DR: In this article, the authors presented a flip-chip light-emitting diodes (FCLEDs) with a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200-1000 mA, J∼30-143 A/cm2) operation with low forward voltages.

TL;DR: In this article, the relationship between microstructure and luminescence efficiency for heteroepitaxial films of GaN grown on c-axis sapphire substrates by metalorganic chemical-vapor deposition was discussed.

TL;DR: In this article, the key design features of high power light emitting diodes (LEDs) are covered with special emphasis on power packaging, flip-chip device design, and phosphor coating technology.

TL;DR: In this paper, the growth of AlGaN using organometallic vapor phase epitaxy has been studied as a function of reactor pressure in a horizontal reactor, and the results indicate that the parasitic reaction between TMGa and NH3 is not substantial in the reactor used in this study.