M
M. J. Schurman
Researcher at Rutgers University
Publications - 11
Citations - 730
M. J. Schurman is an academic researcher from Rutgers University. The author has contributed to research in topics: Doping & Electron mobility. The author has an hindex of 8, co-authored 11 publications receiving 713 citations.
Papers
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Journal ArticleDOI
Inductively coupled plasma etching of GaN
Randy J. Shul,G.B. McClellan,S. A. Casalnuovo,D. J. Rieger,Stephen J. Pearton,C. Constantine,C. Barratt,Robert F. Karlicek,Chuong A. Tran,M. J. Schurman +9 more
TL;DR: In this article, inductively coupled plasma (ICP) etch rates for GaN were reported as a function of plasma pressure, plasma chemistry, rf power, and ICP power.
Journal ArticleDOI
Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
Fan Ren,Minghwei Hong,S. N. G. Chu,M. A. Marcus,M. J. Schurman,Albert G. Baca,S. J. Pearton,C. R. Abernathy +7 more
TL;DR: In this article, the effect of temperature on gate leakage was investigated and it was shown that gate leakage is significantly reduced at elevated temperature relative to a conventional metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on the same GaN layer.
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Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
W. Grieshaber,Erdmann Frederick Schubert,I. D. Goepfert,Robert F. Karlicek,M. J. Schurman,C. Tran +5 more
TL;DR: In this article, it was shown that the peak intensity of the yellow luminescence line is negligibly small at typical injection currents of light-emitting diodes and lasers.
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Effect of structural defects and chemical impurities on Hall mobilities in low pressure MOCVD grown GaN
TL;DR: In this paper, the effect of structural defects and chemical impurities have on the electron mobility in GaN films grown in a production scale metalorganic chemical vapor depositon system was examined, and it was found that structural defects are not the primary contributor to low mobility.
Journal ArticleDOI
Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
Fan Ren,C. R. Abernathy,J. D. MacKenzie,Brent P. Gila,S. J. Pearton,Minghwei Hong,M.A Marcus,M. J. Schurman,Albert G. Baca,Randy J. Shul +9 more
TL;DR: In this article, a 345 A of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a SVT RF N2 plasma.