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Mahesh Kumar

Researcher at Indian Institute of Technology, Jodhpur

Publications -  266
Citations -  6760

Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.

Papers
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Journal Article

Studies on path coefficient analysis in papaya (Carica papaya L.)

TL;DR: Yield and quality are the most important economic traits in papaya and therefore, this genotype can be recommended for selection.
Journal ArticleDOI

Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy

TL;DR: In this paper, the indium nitride (InN)-based nanometric-objects were grown directly on a c-sapphire substrate by using plasma-assisted molecular beam epitaxy (PAMBE) at different substrate temperatures.
Proceedings Article

Bonding techniques for silicon microsensors

TL;DR: In this paper, anodic bonding between Si and glass substrate has been investigated in detail and thermal bonding of Si to glass using a thin metallic intermediate layer has also been demonstrated, which has potential applications for microsensor fabrication and packaging that require low-temperature processing at the wafer level and good bonding strength.
Proceedings ArticleDOI

NO2 sensing at room temperature using vertically aligned MoS2 flakes network

TL;DR: In this paper, the authors have synthesized the horizontally and vertically aligned MoS2 flake network using conventional chemical vapor deposition technique, and the morphology and number of layers were confirmed by SEM and Raman spectroscopy, respectively.
Journal ArticleDOI

Strategic review on chemical vapor deposition technology-derived 2D material nanostructures for room-temperature gas sensors

TL;DR: The significance of two-dimensional (2D) materials including graphene, and transition metal dichalcogenides has been escalating in gas sensor technology owing to detection of gases at room temperature (RT) and good performance as discussed by the authors .