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Mahesh Kumar

Researcher at Indian Institute of Technology, Jodhpur

Publications -  266
Citations -  6760

Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.

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Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring

TL;DR: In this paper, a sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT).
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Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

TL;DR: In this article, the authors used RF magnetron sputtering technique to grow ZnO nanorods on Si(100) substrate using X-ray diffraction to obtain high crystalline and optical quality of ZnOs and very low defect density.
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Exploring Genetic Algorithm for Shortest Path Optimization in Data Networks

TL;DR: A Genetic algorithm is implemented to finds the set of optimal routes to send the traffic from source to destination in dynamic network.
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Efficient room temperature hydrogen sensor based on UV-activated ZnO nano-network.

TL;DR: The UV-photoactivated mode enhanced the adsorption of photo-induced O- and O2- ions, and the d-band electron transition from the Au nanoparticles to ZnO-which increased the chemisorbed reaction between hydrogen and oxygen.
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Relaxor behavior in BaTiO3

TL;DR: BaTiO3 shows relaxation effects when minute concentrations of Bi+3 and Fe+3 are added in varying molar ratios as discussed by the authors, while excess addition of either of the dopants produces a negative shift in the transition maximum with increasing frequency.