M
Mahesh Kumar
Researcher at Indian Institute of Technology, Jodhpur
Publications - 266
Citations - 6760
Mahesh Kumar is an academic researcher from Indian Institute of Technology, Jodhpur. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 29, co-authored 204 publications receiving 4864 citations. Previous affiliations of Mahesh Kumar include Indian Institutes of Technology & Indian Institute of Technology Delhi.
Papers
More filters
Journal ArticleDOI
Structural and optical properties of nonpolar (1 1 −2 0) a-plane GaN grown on (1 −1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
Mohana K. Rajpalke,Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Thirumaleshwara N. Bhat,Neeraj Sinha,S. B. Krupanidhi +7 more
TL;DR: In this paper, the structural and optical properties of a-plane GaN film grown on a r-plane sapphire substrate by plasma-assisted molecular beam epitaxy were reported.
Journal ArticleDOI
Engaging the flux-grown La1−xSrxFe1−yTiyO3 crystals in visible-light-driven photocatalytic hydrogen generation
Mirabbos Hojamberdiev,Mirabbos Hojamberdiev,Kenta Kawashima,Mahesh Kumar,Akira Yamakata,Kunio Yubuta,Aleksander Gurlo,Masashi Hasegawa,Kazunari Domen,Katsuya Teshima +9 more
TL;DR: In this paper, the effects of solute concentration in the KCl-flux growth and partial A-and B-site substitution are investigated in order to further improve the photocatalytic performance of LaFeO 3.
Journal ArticleDOI
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE
Mahesh Kumar,Mahesh Kumar,Thirumaleshwara N. Bhat,Basanta Roul,Basanta Roul,Mohana K. Rajpalke,A. T. Kalghatgi,S. B. Krupanidhi +7 more
TL;DR: In this paper, the optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration.
Journal ArticleDOI
Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions
Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Neeraj Sinha,A. T. Kalghatgi,S. B. Krupanidhi +8 more
TL;DR: In this paper, the electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200-500 K. The barrier height and the ideality factor were calculated from currentvoltage (I-V) characteristics based on thermionic emission (TE), and found to be temperature dependent.
Journal ArticleDOI
Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate
Mahesh Kumar,Basanta Roul,Arjun Shetty,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,A. T. Kalghatgi,S. B. Krupanidhi +6 more
TL;DR: In this paper, single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations were examined by x-ray photoelectron spectroscopy.