Mahmut Sami Kavrik

TL;DR: Density functional theory simulations demonstrate that a sub-0.5 nm thick SiO x-rich surface layer can produce an electrically passivated HfO2/SiGe interface, and fabrication of high-performance SiGe CMOS devices with these structures exhibited significant capacitance enhancement along with a reduction in interface defect density.

TL;DR: This result shows that in scaled CMOS, remote oxide ALD (oxide ALD on top of the gate oxide) can be used to suppress electronic defects at gate oxide semiconductor interfaces by oxygen scavenging.

TL;DR: Continuous bead-free polycrystalline yttrium iron garnet (YIG) nanofibers 100 mu m long and 50-100 nm in diameter were sintered by solgel calcination assisted electrospinning as discussed by the authors.

TL;DR: In this paper, a self-nucleating Al2O3/HfO2 bilayer gate stack was constructed on a high aspect ratio Si3N4/SiO2/Si pattern surface.

TL;DR: In this article, a comprehensive density-functional theory (DFT) molecular dynamics simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers.