Marina Radulaski

TL;DR: In this article, a fabrication process for thin films of 4H-SiC, which are compatible with industry-standard, CMOS nanofabrication, is presented, which provides a viable route towards industry-compatible, scalable colour-centre-based quantum technologies, including the monolithic generation and frequency conversion of quantum light on-chip.

TL;DR: A scalable array of 4H-SiC nanopillars incorporating single silicon vacancy centers is developed, readily available to serve as efficient single photon sources or quantum bits interfaced with free-space or lensed-fiber optics.

TL;DR: Strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity is demonstrated, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode.

TL;DR: Moody et al. as discussed by the authors highlighted the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges and highlighted the transition from single and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted and utilized for quantum computing, communications, metrology, and sensing.

TL;DR: In this paper, a long spin-coherence time, a doubling in fluorescence intensity by spin control, and 40% photon emission into the zero-phonon line are shown.