Maziar Farahmand

TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.

TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.

TL;DR: In this article, the authors used the Monte Carlo method to simulate electron transport in bulk, wurtzite phase AlN using a three-valley analytical band structure, where spherical, nonparabolic conduction band valleys at the Γ, K, and U symmetry points of the Brillouin zone were fitted to a first-principles band structure.

TL;DR: In this article, the authors present a general methodology, materials theory based modeling, for predicting device performance in technologically immature materials that can proceed relatively independently of experiment, using Monte Carlo and selfconsistent charge control modeling of GaN based devices.

TL;DR: Dept. of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455; Dept. of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden as mentioned in this paper.