Journal ArticleDOI
Materials theory based modeling of wide band gap semiconductors: from basic properties to devices
Kevin F. Brennan,Enrico Bellotti,Maziar Farahmand,J.N. Haralson,P. Paul Ruden,John D. Albrecht,Agustinus Sutandi +6 more
TLDR
In this article, the authors present a general methodology, materials theory based modeling, for predicting device performance in technologically immature materials that can proceed relatively independently of experiment, using Monte Carlo and selfconsistent charge control modeling of GaN based devices.Abstract:
In this paper we present a general methodology, materials theory based modeling, for predicting device performance in technologically immature materials that can proceed relatively independently of experiment. The models incorporated within this general approach extend from a fundamental physics based, microscopic analysis to macroscopic, engineering based device models. Using this scheme, we have investigated the transport and breakdown properties of several emerging wide band gap semiconductor materials, i.e. GaN, InN, 3C-SiC, and 4H-SiC. The carrier drift velocities, mobilities, and impact ionization coefficients for these materials can be predicted using the materials theory based modeling method. Using these results, device level simulations can then be made. Here we report Monte Carlo and selfconsistent charge control modeling of GaN based devices. Comparison to experimental measurements is made when possible. Good agreement between the selfconsistent charge control model calculations and experiment is obtained. Some of the issues pertinent to heterostructure bipolar transistor modeling of GaN are discussed.read more
Citations
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Journal ArticleDOI
Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures
Tsung-Hsing Yu,Kevin F. Brennan +1 more
TL;DR: In this paper, the authors presented detailed Monte Carlo-based calculations of the electron dynamics in GaN-AlGaN heterostructures in the presence of strain polarization fields.
Journal ArticleDOI
Influence of electron mobility modeling on DC I-V characteristics of WZ-GaN MESFET
V.M. Polyakov,Frank Schwierz +1 more
TL;DR: In this paper, a drift-diffusion based simulation of a wurtzite (WZ) GaN MESFET is presented, where two different analytical expressions are used for the electron mobility as a function of electric field.
Journal ArticleDOI
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
L. Ardaravičius,M. Ramonas,J. Liberis,O. Kiprijanovic,Arvydas Matulionis,J. Q. Xie,Mingzhong Wu,Jacob H. Leach,Hadis Morkoç +8 more
TL;DR: In this paper, the effect of the channel length on the current was investigated for a nominally undoped two-dimensional channel confined in a nearly lattice-matched Al0.82In0.18N/AlN/GaN structure at room temperature.
Journal ArticleDOI
Influence of the electron–phonon interaction on electron transport in wurtzite GaN
TL;DR: In this article, a full-band electron transport calculation in wurtzite phase GaN based on an accurate model of electron-phonon interactions using a rigid pseudo-ion model is reported.
Journal ArticleDOI
Importance of the Gate-Dependent Polarization Charge on the Operation of GaN HEMTs
TL;DR: In this paper, the influence of the gatevoltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs was investigated.
References
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Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
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Semiconductor ultraviolet detectors
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Journal ArticleDOI
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
TL;DR: In this article, electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field effect transistor structures and the measured electron distributions demonstrate the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructures device characteristics.
Journal ArticleDOI
Electron transport characteristics of GaN for high temperature device modeling
TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
Journal ArticleDOI
Piezoelectric charge densities in AlGaN/GaN HFETs
TL;DR: In this paper, the piezoelectric charge density at (0001) AlGaN/GaN interfaces is estimated for both MBE and MOCVD structures on sapphire and SiC substrate.
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