M
Maziar Farahmand
Researcher at Georgia Institute of Technology
Publications - 11
Citations - 858
Maziar Farahmand is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Wurtzite crystal structure & Monte Carlo method. The author has an hindex of 6, co-authored 11 publications receiving 789 citations.
Papers
More filters
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
Journal ArticleDOI
Electron transport characteristics of GaN for high temperature device modeling
TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
Journal ArticleDOI
Monte Carlo calculation of electron transport properties of bulk AlN
TL;DR: In this article, the authors used the Monte Carlo method to simulate electron transport in bulk, wurtzite phase AlN using a three-valley analytical band structure, where spherical, nonparabolic conduction band valleys at the Γ, K, and U symmetry points of the Brillouin zone were fitted to a first-principles band structure.
Journal ArticleDOI
Materials theory based modeling of wide band gap semiconductors: from basic properties to devices
Kevin F. Brennan,Enrico Bellotti,Maziar Farahmand,J.N. Haralson,P. Paul Ruden,John D. Albrecht,Agustinus Sutandi +6 more
TL;DR: In this article, the authors present a general methodology, materials theory based modeling, for predicting device performance in technologically immature materials that can proceed relatively independently of experiment, using Monte Carlo and selfconsistent charge control modeling of GaN based devices.
Journal ArticleDOI
Simulation of carrier transport in wide band gap semiconductors
Enrico Bellotti,Maziar Farahmand,Michele Goano,Enrico Ghillino,C. Garetto,Giovanni Ghione,Hans-Erik Nilsson,Kevin F. Brennan,P. Paul Ruden +8 more
TL;DR: Dept. of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455; Dept. of Information Technology, Mid-Sweden University, S-851 70 Sundsvall, Sweden as mentioned in this paper.