M
Mehmet Kaynak
Researcher at Leibniz Institute for Neurobiology
Publications - 290
Citations - 2257
Mehmet Kaynak is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: BiCMOS & Amplifier. The author has an hindex of 21, co-authored 271 publications receiving 1734 citations. Previous affiliations of Mehmet Kaynak include Leibniz Association & Karlsruhe Institute of Technology.
Papers
More filters
Journal ArticleDOI
Erratum to “High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure”
Zhi Hu,Mehmet Kaynak,Ruonan Han +2 more
TL;DR: A highly scalable architecture of coherent harmonic oscillator array for high-power and narrow-beamwidth radiation in the mid-terahertz (THz) band is introduced, enabling implementation of high-density THz arrays.
Journal ArticleDOI
A D-Band Micromachined End-Fire Antenna in 130-nm SiGe BiCMOS Technology
Wasif Tanveer Khan,A. Cagri Ulusoy,Gaëtan Dufour,Mehmet Kaynak,Bernd Tillack,John D. Cressler,John Papapolymerou +6 more
TL;DR: In this article, the design of a radiation-efficient D-band end-fire on-chip antenna utilizing a localized back-side etching (LBE) technique, as well as an antenna-in-package (AiP) on a low-cost organic substrate, is presented.
Journal ArticleDOI
A 6 Bit Vector-Sum Phase Shifter With a Decoder Based Control Circuit for X-Band Phased-Arrays
TL;DR: In this article, a 6-bit vector-sum phase shifter with a novel control circuitry for X-band phased-arrays using a 0.25-μm SiGe BiCMOS technology is presented.
Proceedings ArticleDOI
A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology
TL;DR: In this paper, an on-chip double-dipole antenna by applying micromachining techniques based on a standard SiGe BiCMOS process has been presented, which enables the fully integration of millimeter-wave transceiver and antenna into a single chip.
Journal ArticleDOI
A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K
Partha S. Chakraborty,Adilson S. Cardoso,Brian R. Wier,Anup P. Omprakash,John D. Cressler,Mehmet Kaynak,Bernd Tillack +6 more
TL;DR: In this paper, the authors demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures.