Communication at millimeter wave (mmWave) frequencies is defining a new era of wireless communication. The mmWave band offers higher bandwidth communication channels versus those presently used in commercial wireless systems. The applications of mmWave are immense: wireless local and personal area networks in the unlicensed band, 5G cellular systems, not to mention vehicular area networks, ad hoc networks, and wearables. Signal processing is critical for enabling the next generation of mmWave communication. Due to the use of large antenna arrays at the transmitter and receiver, combined with radio frequency and mixed signal power constraints, new multiple-input multiple-output (MIMO) communication signal processing techniques are needed. Because of the wide bandwidths, low complexity transceiver algorithms become important. There are opportunities to exploit techniques like compressed sensing for channel estimation and beamforming. This article provides an overview of signal processing challenges in mmWave wireless systems, with an emphasis on those faced by using MIMO communication at higher carrier frequencies.

An Overview of Signal Processing Techniques for Millimeter Wave MIMO Systems

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

http://www.acsu.buffalo.edu/~jmjornet/papers/2014/j1.pdf

Full length article: Terahertz band: Next frontier for wireless communications

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Design Of Analog Cmos Integrated Circuits

Before the emergence of ultra-wideband (UWB) radios, widely used wireless communications were based on sinusoidal carriers, and impulse technologies were employed only in specific applications (e.g. radar). In 2002, the Federal Communication Commission (FCC) allowed unlicensed operation between 3.1–10.6 GHz for UWB communication, using a wideband signal format with a low EIRP level (−41.3dBm/MHz). UWB communication systems then emerged as an alternative to narrowband systems and significant effort in this area has been invested at the regulatory, commercial, and research levels.

IEEE Transactions on Microwave Theory and Techniques and Antennas and Propagation Announce a Joint Special Issue on Ultra-Wideband (UWB) Technology

We introduce a highly scalable architecture of coherent harmonic oscillator array for high-power and narrow-beamwidth radiation in the mid-terahertz (THz) band. The array consists of horizontal and vertical slotlines (i.e., slot mesh) located at the boundaries between oscillator elements. Through such a structure, the following operations are achieved simultaneously: 1) maximum oscillation power at fundamental frequency $f_{0}$ ; 2) precise synchronization of the oscillation phase among elements; 3) cancellation of the radiation at $f_{0}$ , $2f_{0}$ , and $3f_{0}$ ; and 4) efficient radiation and power combining at $4f_{0}$ . The resultant compact design fits into the optimal radiator pitch of $\lambda _{4f_{0}}/2$ (half wavelength) for the suppression of sidelobes, hence enabling implementation of high-density THz arrays. In particular, an array prototype of 42 coherent radiators (with 91 resonant antennas) at 1 THz is presented using the IHP S13G2 130-nm SiGe process. The chip occupies only 1-mm2 area and consumes 1.1 W of dc power. The measured total radiated power and the effective isotropically radiated power are 80 $\mu \text{W}$ and 13 dBm, respectively.

/pdf/erratum-to-high-power-radiation-at-1-thz-in-silicon-a-fully-4hd19kk8ys.pdf

Erratum to “High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure”

The design of a radiation-efficient D-band end-fire on-chip antenna utilizing a localized back-side etching (LBE) technique, as well as an antenna-in-package (AiP) on a low-cost organic substrate, is presented. Quasi-Yagi-Uda antennas are chosen for end-fire radiation because of their compact size. The on-chip antenna is realized in the back-end of the line (BEOL) process of a 130-nm SiGe BiCMOS technology, whereas the in-package antenna is realized in liquid crystal polymer (LCP) technology for comparison. The on-chip antenna design is optimized to meet both process reliability specifications and radiation performance, and corresponding design guidelines are provided. The fabricated on-chip antennas show the state-of-the-art performance with a peak gain of 4.7 dBi, simulated radiation efficiency of 82%, and measured radiation efficiency of 72%–76% using the gain/directivity (G/D) and wheeler-cap methods at 143 GHz. The antenna demonstrates a 3-dB gain bandwidth of more than 30 GHz and 10-dB impedance bandwidth greater than 20 GHz (14% impedance bandwidth). The measurements of the on-package end-fire antenna showed very comparable results with a peak measured gain of 6 dBi and a simulated and measured radiation efficiency of 92% and 86% at 143 GHz. These results demonstrate that highly efficient on-chip end-fire antenna implementation is possible in standard commercially available BiCMOS process.

A D-Band Micromachined End-Fire Antenna in 130-nm SiGe BiCMOS Technology

This letter presents a 6 bit vector-sum phase shifter with a novel control circuitry for X-band phased-arrays using a 0.25 $\mu$ m SiGe BiCMOS technology. A balanced active balun and highly accurate I/Q network are employed to generate the reference in-phase and quadrature vectors. The desired phase is synthesized by modulating and summing the generated reference vectors using current steering VGAs that are controlled by a decoder based control circuit. The phase shifter resulted in a measured RMS phase error ${ between 9.6–11.7 GHz and ${ between 8.2–12 GHz, achieving 6 bit phase resolution. The chip size is 1.87 $\,\times\,$ 0.88 mm $^2$ , excluding pads. To the best of authors' knowledge, this is the first demonstration of a digitally controlled 6 bit vector-sum phase shifter for X-band.

/pdf/a-6-bit-vector-sum-phase-shifter-with-a-decoder-based-3koc0vllc5.pdf

A 6 Bit Vector-Sum Phase Shifter With a Decoder Based Control Circuit for X-Band Phased-Arrays

This paper presents an on-chip double-dipole antenna by applying micromachining techniques based on a standard SiGe BiCMOS process. It enables the fully integration of millimeter-wave transceiver and antenna into a single chip. A parametric study has been made in simulation which reveals the influence of the key design parameters over the radiation efficiency and directivity. A prototype has been fabricated and measured to verify the design. The measured peak gain is 8.4 dBi at 130 GHz with a simulated efficiency of 60 %. The 3-dB gain bandwidth is 122 – 140 GHz.

A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology

We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak fMAX of 798 GHz (peak fT of 479 GHz) at 4.3 K was measured for a device with a BVCEO of 1.67 V. This scaled SiGe HBT also exhibits excellent thermal properties, as required from an electro-thermal reliability perspective. Taken together, these results strongly suggest that at the limits of scaling, robust, and manufacturable SiGe HBTs designed for room temperature operation are likely to achieve THz speeds.

Mehmet Kaynak

Papers

Erratum to “High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure”

A D-Band Micromachined End-Fire Antenna in 130-nm SiGe BiCMOS Technology

A 6 Bit Vector-Sum Phase Shifter With a Decoder Based Control Circuit for X-Band Phased-Arrays

A micromachined double-dipole antenna for 122 – 140 GHz applications based on a SiGe BiCMOS technology

A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K