M
Mikko Heikkilä
Researcher at University of Helsinki
Publications - 97
Citations - 2100
Mikko Heikkilä is an academic researcher from University of Helsinki. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 23, co-authored 90 publications receiving 1739 citations.
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Atomic layer deposition of TiO2−xNx thin films for photocatalytic applications
TL;DR: In this article, nitrogen-doped TiO2 films were grown by atomic layer deposition (ALD) using TiCl 4, N H 3 and water as precursors, and the films were characterized by XRD, XPS, SEM and UV-vis spectrometry.
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Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory Applications**
TL;DR: In this article, a review of high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments, is presented, including possible ALD routes to materials not previously grown.
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Thermal study on electrospun polyvinylpyrrolidone/ammonium metatungstate nanofibers: optimising the annealing conditions for obtaining WO3 nanofibers
Imre Miklós Szilágyi,Imre Miklós Szilágyi,Eero Santala,Mikko Heikkilä,Marianna Kemell,Timur Nikitin,Leonid Khriachtchev,Markku Räsänen,Mikko Ritala,Markku Leskelä +9 more
TL;DR: In this paper, the optimal heating conditions when electrospun organic/inorganic composite fibers are annealed to get ceramic nanofibers in appropriate quality (crystal structure, composition, and morphology) and to avoid their disintegration were discussed.
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Lithium Phosphate Thin Films Grown by Atomic Layer Deposition
Jani Hämäläinen,Jani Holopainen,Frans Munnik,Timo Hatanpää,Mikko Heikkilä,Mikko Ritala,Markku Leskelä +6 more
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Atomic layer deposition and characterization of vanadium oxide thin films
Timothee Blanquart,Jaakko Niinistö,Marco Gavagnin,V Valentino Longo,Mikko Heikkilä,Esa Puukilainen,Venkateswara R. Pallem,Christian Dussarrat,Mikko Ritala,Markku Leskelä +9 more
TL;DR: In this paper, VOx films were grown by atomic layer deposition (ALD) using V(NEtMe)4 as the vanadium precursor and either ozone or water as the oxygen source.