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Mikko Heikkilä

Researcher at University of Helsinki

Publications -  97
Citations -  2100

Mikko Heikkilä is an academic researcher from University of Helsinki. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 23, co-authored 90 publications receiving 1739 citations.

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Atomic layer deposition of TiO2−xNx thin films for photocatalytic applications

TL;DR: In this article, nitrogen-doped TiO2 films were grown by atomic layer deposition (ALD) using TiCl 4, N H 3 and water as precursors, and the films were characterized by XRD, XPS, SEM and UV-vis spectrometry.
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Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory Applications**

TL;DR: In this article, a review of high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments, is presented, including possible ALD routes to materials not previously grown.
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Thermal study on electrospun polyvinylpyrrolidone/ammonium metatungstate nanofibers: optimising the annealing conditions for obtaining WO3 nanofibers

TL;DR: In this paper, the optimal heating conditions when electrospun organic/inorganic composite fibers are annealed to get ceramic nanofibers in appropriate quality (crystal structure, composition, and morphology) and to avoid their disintegration were discussed.
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Atomic layer deposition and characterization of vanadium oxide thin films

TL;DR: In this paper, VOx films were grown by atomic layer deposition (ALD) using V(NEtMe)4 as the vanadium precursor and either ozone or water as the oxygen source.