Showing papers by "Milan Vanecek published in 2004"

Thin‐film silicon solar cell technology

Abstract: This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si:H) thin films (layers), both deposited at low temperatures (200°C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p–i–n-type solar cells, as fabricated so far, are compared in their key parameters (Jsc, FF, Voc) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the μc-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of other PV technologies. Copyright © 2004 John Wiley & Sons, Ltd.

Absorption loss at nanorough silver back reflector of thin-film silicon solar cells

Abstract: Absorption losses at a nanorough silver back reflector of a solar cell were measured with high accuracy by photothermal deflection spectroscopy. Roughness was characterized by atomic force microscopy. The observed increase of absorption, compared to the smooth silver, was explained by the surface plasmon absorption. Two series of silver back reflectors (one covered with thin ZnO layer) were investigated and their absorption related to surface morphology.

Improved three-dimensional optical model for thin-film silicon solar cells

Abstract: We present an optical model for thin-film silicon solar cells (both single and multijunction) with nanorough surfaces/interfaces. For these cells, the optical absorptance within each layer and the total reflectance are computed taking into account roughness, angular distribution of scattered light, thicknesses, and optical constants of all layers. In the model, we combine coherent approach, scattering theory, and Monte Carlo tracing method. Results of the model are shown to be in good agreement with the experimentally measured spectral response and the total reflectance of solar cells. Some predictions of the ultimate solar cell performance based on the model are presented as well.

Effect of diamond nucleation process on propagation losses of AlN/diamond SAW filter

Abstract: In this work, the effect of a diamond nucleation process on freestanding aluminium nitride (AlN)/diamond surface acoustic wave (SAW) device performances was studied. Before diamond deposition, silicon (Si) substrates have been mechanically nucleated, using an ultrasonic vibration table with submicron diamond slurry, and bias-enhanced nucleated (BEN). Freestanding diamond layers obtained on mechanically scratched Si substrates exhibit a surface roughness of R/sub MS/=13 nm, whereas very low surface roughness (as low as R/sub MS//spl les/1 nm) can be achieved on a freestanding BEN diamond layer. Propagation losses have been measured as a function of the operating frequency for the two nucleation techniques. Dispersion curves of phase velocities and electromechanical coupling coefficient (K/sup 2/) were determined experimentally and by calculation as a function of normalized thickness AlN film (kh/sub AlN/=2/spl pi/h/sub AlN///spl lambda/). Experimental results show that the propagation losses strongly depend on the nucleation technique, and that these losses are weakly increased with frequency when the BEN technique is used.

Diamond growth by microwave plasma enhanced chemical vapour deposition: Optical emission characterisation and effect argon addition

Abstract: Diamond thin films were grown in an ellipsoidal 6 kWatt microwave plasma chemical vapour deposition reactor [1, 2] in a pressure range of 150 to 250 mbar. Effect of total pressure, methane concentration and argon concentration on diamond growth on mechanically seeded silicon substrates and on plasma characteristics were investigated. Optically good thick diamond films were obtained with high growth rate (4.5 μm/h) at high-pressure. The argon concentration affects strongly the deposition rate, the surface morphology and the grain size. The microwave plasma was characterized by optical emission spectroscopy (OES) during deposition. Diamond films were characterized by Raman Spectroscopy and Scanning Electron Microscopy (SEM). The temperatures of the excited CH and C 2 species, as well as the excitation temperature were determined from the OES measurements. The plasma composition is sensitive to the methane concentration and especially to the argon concentration in the discharge.

Low-level optical absorption phenomena in organic thin films for solar cell applications investigated by highly sensitive photocurrent and photothermal techniques

Abstract: Optical absorption phenomena and in particular sub band gap absorption features are of great importance in the understanding of processes of charge generation and transport in organic pure and composite semiconductor films. To come towards this objective, an alternative and high sensitive spectroscopic approach is introduced to examine the absorption of light in pure and compound organic semiconductors. Because sub band gap absorption features are typically characterized by very low absorption coefficients, it is not possible to resolve them using common transmission and reflection measurements and high sensitive alternatives are needed. Therefore, a combination of photocurrent (Constant Photocurrent Method CPM/Fourier Transform Photocurrent Spectroscopy FT-PS) and photothermal techniques (Photothermal Deflection Spectroscopy PDS) has been used, increasing sensitivity by a factor of thousand, reaching detectable absorption coefficients ((E) down to 0.1 cm -1 . In this way, the dynamic range of measurable absorption coefficients is increased by several orders of magnitude compared to transmission/reflection measurements. These techniques have been used here to characterize ground state absorption of thin films of MDMO-PPV, PCBM and a mixture of both materials in a 1:4 ratio, as typically used in a standard active layer in a fully organic solar cell. The spectra reveal defect related absorption phenomena and significant indication of existing interaction in the ground state between both materials, contrary to the widely spread conviction that this is not the case. Experimental details of the techniques and measurement procedures are explained.