Julien Bailat

TL;DR: In this article, the authors describe the use of hydrogenated amorphous silicon (a-Si:H) and hydrogenated micro-crystalline silicon (μc-Si-H) thin films (layers), both deposited at low temperatures (200°C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen.

TL;DR: A four-terminal tandem solar cell consisting of a methyl ammonium lead triiodide top cell and a c-Si heterojunction bottom cell that exhibits broad-band transparency owing to its design free of metallic components and yields a transmittance of >55% in the near-infrared spectral region is presented.

TL;DR: In this paper, SiO-based intermediate reflectors (SOIRs) can be fabricated in the same reactor and with the same process gases as used for thin-film silicon solar cells.

TL;DR: A series of nip-type microcrystalline silicon (mc-Si:H) single-junction solar cells has been studied by electrical characterisation, by transmission electron microscopy (TEM) and by Raman spectroscopy using 514 and 633 nm excitation light and both top and bottomillumination as discussed by the authors.

TL;DR: In this paper, the structural and electrical performances of microcrystalline silicon (μc-Si:H) single junction solar cells co-deposited on a series of substrates having different surface morphologies varying from V-shaped to U-shaped valleys, are analyzed Transmission electron microscopy (TEM) is used to quantify the density of cracks within the cells.