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Design Of Analog Cmos Integrated Circuits

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material for the fabrication of high-speed/high-voltage components. The presence of spontaneous and piezoelectric polarization allows us to create a two-dimensional electron gas, with high mobility and large channel density, in the absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors, switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable a high-frequency operation, with consequent advantages in terms of miniaturization. For high power/high-voltage operation, vertical device architectures are being proposed and investigated, and three-dimensional structures—fin-shaped, trench-structured, nanowire-based—are demonstrating great potential. Contrary to Si, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This Tutorial describes the physics, technology, and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight into the most relevant aspects gives the reader a comprehensive overview on the present and next-generation GaN electronics.

https://hal.archives-ouvertes.fr/hal-03421528/document

GaN-based power devices: Physics, reliability, and perspectives

https://eprints.lib.hokudai.ac.jp/dspace/bitstream/2115/68840/1/1-s2.0-S1369800117317304-main.pdf

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency-dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC-HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm2/V·s, a high on/off drain current ratio of ~1010, and low dynamic on-resistance degradation.

Interface Characterization of Normally-Off Al2O3/AlN/GaN MOS-Channel-HEMTs with an AlN Interfacial Layer

Recent Advances in GaN‐Based Power HEMT Devices

In this letter, a plasma-free etch stop structure is developed for GaN HEMT toward enhancement-mode operation. The self-terminated precision gate recess is realized by inserting a thin AlN/GaN bilayer in the AlGaN barrier layer. The gate recess is stopped automatically at the GaN insertion layer after high-temperature oxidation and wet etch, leaving a thin AlGaN barrier to maintain a quantum well channel that is normally pinched off. With addition of an Al2O3 gate dielectric, quasi normally OFF GaN MOSHEMTs have been fabricated with high threshold uniformity and low ON-resistance comparable with the normally ON devices on the same wafer. A high channel mobility of 1400 cm $^{2}/\textrm {V}\cdot \textrm {s}$ was obtained due to the preservation of the high electron mobility in the quantum-well channel under the gate.

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is ${1.6}\times {10}^{{8}}$ cm−2 with a GaN drift layer thickness of $4.5~\mu \text{m}$ . The fabricated prototype GaN SBD delivers a high on/off current ratio of $10^{{10}}$ , a high forward current density of 1.6 kA/cm2@3 V, a low specific on-resistance of 1.1 $\text{m}\Omega \cdot \text {cm}^{{2}}$ , and a low ideality factor of 1.23.

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10 10 High On/Off Current Ratio and Low Specific On-Resistance

In this paper, we report the device performance of a high-voltage enhancement-mode (E-mode) GaN MOSHEMT on silicon substrate. Normally off operation is realized by a self-terminated precision gate recess process on an optimized high-electron mobility transistor structure. The GaN MOSHEMT is fully pinched off at zero gate bias, suggesting a “true” normally off operation. The threshold voltage is 0.4 V with a drain current density of 1 $\mu \text{A}$ /mm as the criteria. The device with 15- $\mu \text{m}$ gate-drain distance and 100- $\mu \text{m}$ gate width exhibits a maximum drain current of 356 mA/mm at 8-V gate bias. The on/off current ratio of the device is larger than 1010 with a subthreshold slope of 80 mV/dec. The gate leakage current is below 10−7 mA/mm up to 9-V gate bias. The off-state breakdown voltage (BV) is as high as 1528 V (880 V) measured with floating (grounded) silicon substrate at a drain leakage current criterion of 5 $\mu \text{A}$ /mm. The specific on-resistance ( ${R}_{\text {ON,SP}}$ ) of the device is 2.79 $\text{m}\Omega \cdot$ cm2, and the power figure of merit (BV2/ ${R}_{ \text {ON,SP}}$ ) is 277 MW/cm2. High-voltage pulsed I–V measurement indicates that the dynamic on-resistance is only 1.6 times the static one with a pulsewidth of 10 $\mu \text{s}$ at 400-V off-state quiescent drain bias. The high performance of the normally off GaN MOSHEMT is supposed to benefit from the high quality low pressure chemical vapor deposition Si3N4 passivation layer and the advanced E-mode device fabrication process.

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

Threshold voltage drift under gate bias stress was investigated in gate-recessed enhancement mode (E-mode) GaN MOSFET and depletion mode (D-mode) GaN MOS high-electron-mobility transistor (MOSHEMT) with Al2O3 gate dielectric layer. Besides the positive shift of threshold voltage in both devices under positive gate stress, it is also found that positive shift could also exist in E-mode GaN MOSFET under negative gate bias stress, while negative shift is observed in D-mode MOSHEMT. A three-step trapping and detrapping process was observed in the drain current transient of the device after negative gate bias stress. It was suggested that gate electron injection and the following trapping in the "damaged" gate recessed GaN channel layer is the dominant mechanism for the positive shift of the threshold voltage under negative gate bias in the enhancement mode GaN MOSFET.

https://iopscience.iop.org/article/10.7567/JJAP.54.044101/pdf

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

AlGaN/GaN high-electron-mobility transistor (HEMT) based pH sensors have the advantages of fast response and high stability, and can be used in harsh environments. This paper presents a pH sensor based on a planar dual-gate AlGaN/GaN HEMT cascode amplifier, which can increase the pH sensitivity for about 45 times from 45 mV/pH to 2.06 V/pH with linearity of 1.27%. The results indicate that it is possible to improve the pH sensitivity at the origin of detecting instead of the subsequent complex amplifier circuits. The proposed device has also shown the capacity to adjust the sensor’s sensitivity by changing the gate voltage and the resistance values for various pH ranges of different measuring requirements.

Ming Tao

Papers

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10 10 High On/Off Current Ratio and Low Specific On-Resistance

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities