M
Miro Zeman
Researcher at Delft University of Technology
Publications - 455
Citations - 10476
Miro Zeman is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 46, co-authored 426 publications receiving 9010 citations. Previous affiliations of Miro Zeman include Academy of Sciences of the Czech Republic & Cochin University of Science and Technology.
Papers
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Journal ArticleDOI
Influence of Mo/MoSe2 microstructure on the damp heat stability of the Cu(In,Ga)Se2 back contact molybdenum
Mirjam Theelen,Sylvie Harel,Melvin Verschuren,M. Tomassini,Arjan Hovestad,Nicolas Barreau,Jurgen van Berkum,Zeger Vroon,Miro Zeman +8 more
TL;DR: In this paper, the degradation behavior of Mo/MoSe2 layers has been investigated using damp heat exposure and it was observed that the degradation resulted in the formation of needles and molybdenum oxide layers near the glass/Mo and the Mo/Cu(In,Ga)Se2 interfaces.
Proceedings ArticleDOI
Optical modeling of a-Si:H based solar cells on textured substrates
G. Tao,Miro Zeman,J.W. Metselaar +2 more
TL;DR: In this article, a new GENPRO2 computer program package is developed to meet the needs of optical modeling of a-Si:H based solar cells on textured substrates.
Journal ArticleDOI
Photoelectrocatalytic oxidation of phenol for water treatment using a BiVO4 thin-film photoanode
Yasmina Bennani,Paula Perez-Rodriguez,Mathew Jose Alani,Wilson A. Smith,Luuk C. Rietveld,Miro Zeman,Arno H. M. Smets +6 more
TL;DR: In this article, a BiVO4 thin film was synthesized via spray pyrolysis for photoelectrocatalytic oxidation of phenol with solar light, which was compared with those of the commonly used photocatalyst TiO2.
Proceedings ArticleDOI
Computer modeling of amorphous silicon tandem cells
TL;DR: A new modeling approach for simulation of a-Si:H tandem cells using the trap assisted tunneling model and an enhanced effective extended state mobility to model the recombination and transport in the high field region of the tunnel recombination junction is used.