M
Miro Zeman
Researcher at Delft University of Technology
Publications - 455
Citations - 10476
Miro Zeman is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 46, co-authored 426 publications receiving 9010 citations. Previous affiliations of Miro Zeman include Academy of Sciences of the Czech Republic & Cochin University of Science and Technology.
Papers
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Journal ArticleDOI
Effect of front and back contact roughness on optical properties of single junction a–Si:H solar cells
TL;DR: In this article, the effect of interface roughness on the optical properties of a single junction a-Si:H solar cell by varying the root mean square roughness of the rough interfaces was investigated.
Proceedings ArticleDOI
Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget
TL;DR: In this paper, the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets was shown.
Journal ArticleDOI
Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon
TL;DR: In this article, the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy was studied.
Journal Article
Challenges in amorphous silicon solar cell technology
van Racmm René Swaaij,Miro Zeman,BA Bas Korevaar,C Chiel Smit,J.W. Metselaar,van de Mcm Richard Sanden +5 more
TL;DR: In this article, the performance of amorphous silicon germanium solar cells is investigated and it is shown that the performance is strongly dependent on the width of the grading near the interfaces.
Journal ArticleDOI
Structural Properties of a-Si:H Films with Improved Stability against Light Induced Degradation
TL;DR: In this paper, an X-ray diffraction analysis of thin silicon films was carried out using both the symmetric Bragg-Brentano and asymmetric thin-film attachment geometries, which allows quantitative phase analysis of the films and reveals that amorphous silicon films deposited from silane diluted with hydrogen have the strongest peak in the XRD patterns located around 27.5 degrees.