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Miro Zeman

Researcher at Delft University of Technology

Publications -  455
Citations -  10476

Miro Zeman is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 46, co-authored 426 publications receiving 9010 citations. Previous affiliations of Miro Zeman include Academy of Sciences of the Czech Republic & Cochin University of Science and Technology.

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Enhancing the driving field for plasmonic nanoparticles in thin-film solar cells

TL;DR: The driving field pattern throughout a complete thin-film silicon solar cell is determined and by tuning of the thicknesses of silicon and transparent conductive oxide layers the driving field intensity experienced by an embedded plasmonic nanoparticle can be enhanced up to a factor of 14.
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Effect of substrate morphology slope distributions on light scattering, nc-Si:H film growth, and solar cell performance.

TL;DR: It is observed that besides a high σ(rms), a high slope angle is beneficial to obtain high haze and scattering of light at larger angles, resulting in higher short-circuit current density of nc-Si:H solar cells.
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Simplified process for high efficiency, self-aligned IBC c-Si solar cells combining ion implantation and epitaxial growth: Design and fabrication

TL;DR: In this paper, a novel method for realizing high-efficiency IBC c-Si solar cells based on single-side and low-temperature doping techniques is demonstrated, where epitaxial growth of B-doped Si is used to form the emitter, while P-ion implantation is deployed to form both front and back surface fields.
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Room-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells

TL;DR: In this article, the authors optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature for silicon heterojunction (SHJ) solar cells with front and back contacts.
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Structural and electrical properties of metastable defects in hydrogenated amorphous silicon

TL;DR: In this article, the structural and electrical properties of metastable defects in various types of hydrogenated amorphous silicon have been studied using a powerful combination of continuous wave electron-paramagnetic resonance spectroscopy, electron spin echo (ESE) decay measurements, and Doppler broadening positron annihilation Spectroscopy.