M
Mohamad Moner Al Chawa
Researcher at Dresden University of Technology
Publications - 18
Citations - 150
Mohamad Moner Al Chawa is an academic researcher from Dresden University of Technology. The author has contributed to research in topics: Memristor & Resistive random-access memory. The author has an hindex of 5, co-authored 12 publications receiving 70 citations. Previous affiliations of Mohamad Moner Al Chawa include University of the Balearic Islands.
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Journal ArticleDOI
Exploring resistive switching-based memristors in the charge–flux domain: a modeling approach
Mohamad Moner Al Chawa,Rodrigo Picos,Juan Bautista Roldán,Francisco Jiménez-Molinos,Marco A. Villena,Carol de Benito +5 more
TL;DR: This work analyzed resistive switching-based memristors by using the charge–flux relations instead of the traditional current–voltage approach to develop a model that can be easily included in circuit simulators.
Journal ArticleDOI
On the Thermal Models for Resistive Random Access Memory Circuit Simulation
Juan Bautista Roldán,G. González-Cordero,Rodrigo Picos,Enrique Miranda,Felix Palumbo,Francisco Jiménez-Molinos,Enrique Moreno,D. Maldonado,Santiago Boyeras Baldomá,Mohamad Moner Al Chawa,Carol de Benito,Stavros G. Stavrinides,Jordi Suñé,Leon O. Chua +13 more
TL;DR: In this paper, a thermal model for resistive random access memories (RRAMs) is presented and a 3D numerical solution of the heat equation within a complete RRAM simulator is also taken into account.
Journal ArticleDOI
A Simple Piecewise Model of Reset/Set Transitions in Bipolar ReRAM Memristive Devices
TL;DR: This paper develops and test a piecewise model for the reset and set transitions of a bipolar ReRAM memristive device in the flux-charge space, instead of the usual voltage–current one, and compares the predictions of the model with experimental results.
Journal ArticleDOI
A Simple Quasi-Static Compact Model of Bipolar ReRAM Memristive Devices
TL;DR: A quasi-static compact model for bipolar ReRAM memristive devices based on a piecewise model in flux-charge space for reset and set transitions that has been extended to build a compact model of reset/set transitions for different slopes.
Proceedings ArticleDOI
A Simple Memristor Model for Neuromorphic ReRAM Devices
TL;DR: A simple memristor model for neuromorphic ReRAM devices derived in the flux-charge domain will be proposed and exhibit a high accuracy in all treated cases, thus supporting the development of memory and logic applications using ReRAM elements.