Mohit Bajaj

TL;DR: In this paper, the authors evaluate the impact of band-to-band tunneling on the characteristics of n-channel junctionless transistors (JLTs) and present guidelines to optimize the device for high on-tooff current ratio.

TL;DR: In this article, a detailed 3D numerical analysis is carried out to study and evaluate CMOS logic device and circuit performance of gate-all-around (GAA) Si nanowire (NW) field-effect transistors (FETs) operating in sub-22-nm CMOS technologies.

TL;DR: The effect of solvent on the collapse dynamics of homopolymers is investigated with Brownian dynamics simulations of a non-linear bead-spring chain model incorporating implicit hydrodynamic interactions, suggesting that the polymer collapse takes place via a three-stage mechanism, namely, formation of pearls, coarsening of Pearls and the formation of a compact globule.

TL;DR: High-mobility junctionless gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm(2)/V·s at room temperature with key scattering mechanisms limiting the carrier transport in these nanowires is reported.

TL;DR: In this article, the random dopant fluctuation (RDF)-induced threshold voltage variability, on current variability, and mismatch in undoped channel Si gate-all-around (GAA) n-nanowire MOSFETs were studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport.