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Muhammad A. Elmessary

Researcher at Swansea University

Publications -  23
Citations -  402

Muhammad A. Elmessary is an academic researcher from Swansea University. The author has contributed to research in topics: Monte Carlo method & Scattering. The author has an hindex of 10, co-authored 23 publications receiving 285 citations. Previous affiliations of Muhammad A. Elmessary include Mansoura University.

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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

TL;DR: In this article, the performance, scalability, and resilience of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
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Cost of managing patients with venous leg ulcers

TL;DR: The aim of this study was to estimate costs associated with the management of patients with venous leg ulcers from the perspective of the UK National Health Service (NHS), and this is the first attempt to estimate the costs of managing of VLUs using routine data sources.
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

TL;DR: In this article, the impact of fin-edge roughness and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics is studied and compared between a 10.4-nm gate length In0.53Ga0.47As and a Si FinFET.
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Solitary solution and energy for the Kadomstev–Petviashvili equation in two temperatures charged dusty grains

TL;DR: In this paper, the nonlinear properties of small amplitude dust-acoustic solitary waves (DAWs) in a homogeneous unmagnetized plasma having electrons, singly charged ions, hot and cold dust species with Boltzmann distributions for electrons and ions have been investigated.
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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

TL;DR: In this paper, the effects of nanowire line-edge roughness on threshold voltage and off-current were investigated by calibrated 3D Finite Element (FE) drift-diffusion (DD) toolbox.