M
Muhammad A. Elmessary
Researcher at Swansea University
Publications - 23
Citations - 402
Muhammad A. Elmessary is an academic researcher from Swansea University. The author has contributed to research in topics: Monte Carlo method & Scattering. The author has an hindex of 10, co-authored 23 publications receiving 285 citations. Previous affiliations of Muhammad A. Elmessary include Mansoura University.
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Journal ArticleDOI
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Daniel Nagy,Guillermo Indalecio,Antonio J. Garcia-Loureiro,Muhammad A. Elmessary,Karol Kalna,Natalia Seoane +5 more
TL;DR: In this article, the performance, scalability, and resilience of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Journal ArticleDOI
Cost of managing patients with venous leg ulcers
Ceri Phillips,Ioan Humphreys,Daniel Thayer,Muhammad A. Elmessary,Huw Collins,Christopher D Roberts,Gurudutt Naik,Keith G Harding +7 more
TL;DR: The aim of this study was to estimate costs associated with the management of patients with venous leg ulcers from the perspective of the UK National Health Service (NHS), and this is the first attempt to estimate the costs of managing of VLUs using routine data sources.
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
Natalia Seoane,Guillermo Indalecio,Manuel Aldegunde,Daniel Nagy,Muhammad A. Elmessary,Antonio J. Garcia-Loureiro,Karol Kalna +6 more
TL;DR: In this article, the impact of fin-edge roughness and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics is studied and compared between a 10.4-nm gate length In0.53Ga0.47As and a Si FinFET.
Journal ArticleDOI
Solitary solution and energy for the Kadomstev–Petviashvili equation in two temperatures charged dusty grains
TL;DR: In this paper, the nonlinear properties of small amplitude dust-acoustic solitary waves (DAWs) in a homogeneous unmagnetized plasma having electrons, singly charged ions, hot and cold dust species with Boltzmann distributions for electrons and ions have been investigated.
Journal ArticleDOI
Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
Muhammad A. Elmessary,Daniel Nagy,Manuel Aldegunde,Natalia Seoane,Guillermo Indalecio,Jari Lindberg,Wulf G. Dettmer,Djordje Perić,Antonio J. Garcia-Loureiro,Karol Kalna +9 more
TL;DR: In this paper, the effects of nanowire line-edge roughness on threshold voltage and off-current were investigated by calibrated 3D Finite Element (FE) drift-diffusion (DD) toolbox.