Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process extremely thin insulating layers (high-k oxides) onto large-area silicon substrates. ALD is also a key technology for the surface modification of complex nanostructured materials. After briefly introducing ALD, this Review will focus on the various aspects of nanomaterials and their processing by ALD, including nanopores, nanowires and -tubes, nanopatterning and nanolaminates as well as low-temperature ALD for organic nanostructures and biomaterials. Finally, selected examples will be given of device applications, illustrating recent innovative approaches of how ALD can be used in nanotechnology.

https://www-old.mpi-halle.mpg.de/mpi/publi/pdf/7999_07.pdf

Synthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition

Semiconductor nanowires (NWs) have been studied extensively for over two decades for their novel electronic, photonic, thermal, electrochemical and mechanical properties. This comprehensive review article summarizes major advances in the synthesis, characterization, and application of these materials in the past decade. Developments in the understanding of the fundamental principles of "bottom-up" growth mechanisms are presented, with an emphasis on rational control of the morphology, stoichiometry, and crystal structure of the materials. This is followed by a discussion of the application of nanowires in i) electronic, ii) sensor, iii) photonic, iv) thermoelectric, v) photovoltaic, vi) photoelectrochemical, vii) battery, viii) mechanical, and ix) biological applications. Throughout the discussion, a detailed explanation of the unique properties associated with the one-dimensional nanowire geometry will be presented, and the benefits of these properties for the various applications will be highlighted. The review concludes with a brief perspective on future research directions, and remaining barriers which must be overcome for the successful commercial application of these technologies.

/pdf/25th-anniversary-article-semiconductor-nanowires-synthesis-4ccslz11ke.pdf

25th Anniversary Article: Semiconductor Nanowires – Synthesis, Characterization, and Applications

Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here the memory properties of various materials and systems which appear most strikingly in their non-trivial, time-dependent resistive, capacitative and inductive characteristics. We describe these characteristics within the framework of memristors, memcapacitors and meminductors, namely memory-circuit elements with properties that depend on the history and state of the system. We examine basic issues related to such systems and critically report on both theoretical and experimental progress in understanding their functionalities. We also discuss possible applications of memory effects in various areas of science and technology ranging from digital to analog electronics, biologically inspired circuits and learning. We finally discuss future research opportunities in the field.

Memory effects in complex materials and nanoscale systems

A review on various electrochemical techniques for heavy metal ions detection with different sensing platforms

This review paper explores considerations for ultimate CMOS transistor scaling Transistor architectures such as extremely thin silicon-on-insulator and FinFET (and related architectures such as TriGate, Omega-FET, Pi-Gate), as well as nanowire device architectures, are compared and contrasted Key technology challenges (such as advanced gate stacks, mobility, resistance, and capacitance) shared by all of the architectures will be discussed in relation to recent research results

Considerations for Ultimate CMOS Scaling

Single-crystalline SGOI substrate is achieved by multi-step oxidation of co-sputtered amorphous SiGe film on SOI substrate. Subsequently, SGOI PMOSFET using Pt-germanosilicide Schottky S/D and HfO 2/TaN gate stack integrated with conventional self-aligned top gate process was demonstrated. Excellent performance of the SGOI PMOSFET is presented

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Strained p-channel tri-gate fin-type field-effect transistor (FinFET) with extended-Pi (eΠ) shaped SiGe source/drain (S/D) is demonstrated with enhanced drive current performance of 33% at a fixed drain induced barrier lowering (DIBL) over FinFET with Π-SiGe S/D. The eΠ S/D stressor structure can be easily formed by simply using a longer HF cleaning time prior to the growth of SiGe in the S/D regions. The longer HF cleaning step created a recess into the buried oxide which allows SiGe to be grown below the base of the Si fin at the S/D regions, providing additional strain to the channel. Enhancement of device performance was also found to increase with the decrease of fin width and this benefit aggressively scaled tri-gate FinFET for advance technology node.

https://iopscience.iop.org/article/10.1143/JJAP.47.2589/pdf

Novel Extended-Pi Shaped Silicon-Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor

We report on further performance optimization in a novel n-channel transistor (n-FET) with beneath-the-channel strain-transfer structure (STS) and embedded silicon-carbon source/drain (Si:C S/D) stressors. The incorporation of SiGe STS couples additional strain from the S/D stressors to the overlying Si channel, leading to enhanced strain effects in the channel region. In addition, a two-step recess-etch was used to bring the double-recessed S/D stressors in closer proximity, increasing their lattice interactions with the channel and the STS, thereby significantly increasing the saturation drive current Ionmiddot enhancement over control devices.

Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)

Impacts of Body Contact Structures on SOI NMOSFET DC, RF, and 1/f Noise Characteristics

Background: MDU-1 is a high yielding, indeterminate cluster bean variety. In order to develop determinate mutant with high yield, MDU-1 cluster bean variety was irradiated using gamma rays, electron beam and combination of gamma rays and EMS with different doses and the variability induced in M5 generations were studied. Methods: Twenty one best individual plants from M4 generation were selected based on plant height and higher yield and forwarded to M5 generation where they were evaluated in RBD with three replications. Fourteen non-segregating mutant lines with desirable traits were identified in M5 generation and were evaluated for variability along with the parent MDU1. Result: Five best mutant lines namely ACMC-020-04, ACMC-020-11, ACMC-020-08, ACMC-020-10 and ACMC-020-11 were selected from the 14 accessions based on per se performance and variability analysis. The selected mutants needs to be forwarded for stability testing in different environments.


Genetic Variability Studies in M5 Generations of Determinate Early Maturing Cluster Bean [Cyamopsis tetragonoloba (L.) Taub] (MDU-1) Mutants for Yield and Yield Attributing Characters

N. Balasubramanian

Papers

100 nm Gate Length Pt-Germanosilicide Schottky S/D PMOSFET on SGOI substrate fabricated by novel condensation approach

Novel Extended-Pi Shaped Silicon-Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor

Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)

Impacts of Body Contact Structures on SOI NMOSFET DC, RF, and 1/f Noise Characteristics

Genetic Variability Studies in M5 Generations of Determinate Early Maturing Cluster Bean [Cyamopsis tetragonoloba (L.) Taub] (MDU-1) Mutants for Yield and Yield Attributing Characters