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Nikolay N. Mikhailov

Researcher at Russian Academy of Sciences

Publications -  285
Citations -  2413

Nikolay N. Mikhailov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 23, co-authored 250 publications receiving 2099 citations. Previous affiliations of Nikolay N. Mikhailov include Tomsk State University & Novosibirsk State University.

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The suppression of magnetic level coincidences in tilted magnetic fields in the HgTe quantum well as a consequence of electronic phase transitions under quantum hall effect conditions

TL;DR: Spin level coincidences in the HgTe quantum well observed in comparatively weak tilted magnetic fields were found to transform into anticrossings, and gaps formed in anticrossing nonmonotonically depended on the level filling factor.
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AN INVESTIGATION INTO THE ADMITTANCE OF MIS- STRUCTURES BASED ON MBE HgCdTe WITH QUANTUM WELLS

TL;DR: In this article, the authors investigated the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1-xCdxTe with quantum wells (QW) in the test-signal frequency range 1 kHz -2 МHz at temperatures 8- 300 K.
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A microwave detector based on an MCT photodiode for subthermonuclear plasma research

TL;DR: In this article, a microwave detector including a single-element infrared (IR) photodiode mounted in a cooled Dewar and a preamplifier is developed, which is used for detection of intensity of a CO2 laser beam on plasma fluctuations caused by heating by a relativistic electron beam (REB).
Proceedings ArticleDOI

Two-color arrays for sub-terahertz/infrared imaging

TL;DR: In this paper, the authors considered the conception of two-color broadband detectors based on narrow-gap mercury-cadmium-telluride (MCT) thin layers, which were considered both as sub-terahertz (sub-THz) direct detection bolometers, and 3 to 10 μm infrared (IR) photoconductors.
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The Effect of As + Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n -Hg 0.78 Cd 0.22 Te Films

TL;DR: In this article, the presence of near-surface graded-gap layers and slow surface states were used to determine the main parameters of these layers upon technological procedures involved in the production of photodiodes.