N
Nikolay N. Mikhailov
Researcher at Russian Academy of Sciences
Publications - 285
Citations - 2413
Nikolay N. Mikhailov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 23, co-authored 250 publications receiving 2099 citations. Previous affiliations of Nikolay N. Mikhailov include Tomsk State University & Novosibirsk State University.
Papers
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Journal ArticleDOI
Rashba Spin Splitting in HgCdTe Quantum Wells with Inverted and Normal Band Structures
S. V. Gudina,V. N. Neverov,M. R. Popov,K. V. Turutkin,S. M. Podgornykh,N. G. Shelushinina,M. V. Yakunin,Nikolay N. Mikhailov,Sergey A. Dvoretsky +8 more
TL;DR: In this article , the Rashba-type spin-orbit coupling in QWs with both a normal and inverted band structure was investigated. And the large and similar Rashba splitting (25 −27 meV) was found for different kinds of spectrum, explained by a significant fraction of the p-type wave functions, in both the E1 subband of the sample with a normal spectrum and the H 1 subband for the sample having an inverted one.
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Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures
K. E. Spirin,D. M. Gaponova,V. I. Gavrilenko,V. I. Gavrilenko,Nikolay N. Mikhailov,Sergey A. Dvoretsky +5 more
TL;DR: In this article, residual photoconductivity spectra (RPS) was studied for HgTe/CdHgTe quantum-well heterostructures of n- and p-type conduction at T = 4.2 K.
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Cyclotron resonance in HgCdTe-based heterostructures in strong magnetic fields
M. S. Zholudev,M. S. Zholudev,Frederic Teppe,Milan Orlita,V. Ya. Aleshkin,A V Ikonnkov,V. I. Gavrilenko,Wojciech Knap,Nikolay N. Mikhailov,S. A. Dvoretskii +9 more
TL;DR: In this paper, a cyclotron resonance (CR) study of HgCdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed.
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Quantum Hall states in inverted HgTe quantum wells probed by transconductance fluctuations
S. Mantion,S. Mantion,Colin Avogadri,Sergey S. Krishtopenko,S. Gebert,Sandra Ruffenach,Christophe Consejo,S. V. Morozov,Nikolay N. Mikhailov,Nikolay N. Mikhailov,S. A. Dvoretskii,S. A. Dvoretskii,S. A. Dvoretskii,Wojciech Knap,Sebastien Nanot,Frederic Teppe,Benoit Jouault +16 more
TL;DR: In this paper, the authors investigated quantum Hall states in an inverted HgTe quantum well (QW) close to the critical thickness using transconductance fluctuation (TF) measurements and attributed the emergence of those TFs to the localization and charging of the heavy holes located in the side maxima of the valence band.
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Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching
M. Pociask,I. I. Izhnin,Sergey A. Dvoretsky,Nikolay N. Mikhailov,Yu. G. Sidorov,V. S. Varavin,K. D. Mynbaev,V. I. Ivanov-Omskii +7 more
TL;DR: In this article, the electrical properties of MBE-grown n-HgCdTe layers, both undoped and In-doped during growth and modified by ion etching are studied.