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Nikolay N. Mikhailov

Researcher at Russian Academy of Sciences

Publications -  285
Citations -  2413

Nikolay N. Mikhailov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 23, co-authored 250 publications receiving 2099 citations. Previous affiliations of Nikolay N. Mikhailov include Tomsk State University & Novosibirsk State University.

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Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

TL;DR: In this article, the authors present a theoretical model which accounts for both the edge and bulk contributions to the electrical conductivity and thermoelectric effect in a 2D topological insulator, including the effects of edge to bulk leakage.
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Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

TL;DR: The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz as discussed by the authors.
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Photoluminescence of CdHgTe based nanoheterostructures

TL;DR: In this paper, the photoluminescence spectra of nano-hetero-structures grown by molecular beam epitaxy on CdTe/ZnTe/GaAs substrates were studied.
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Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy

TL;DR: In this article, a high-stability laser ellipsometer has been designed to monitor the in situ MCT layer growth by the molecular beam epitaxy, which allowed a decrease in the dispersion of the MCT composition by an order of magnitude from experiment to experiment and its precision to be maintained at a level of ± 0.003 mole fractions of CdTe.
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Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

TL;DR: In this paper, simultaneous measurements of electrical conductivity, Hall coefficient, and photoluminescence spectra of ion-milled Hg1−−xCdxTe films were performed during post-milling ageing of the films at 293 K.