N
Nikolay N. Mikhailov
Researcher at Russian Academy of Sciences
Publications - 285
Citations - 2413
Nikolay N. Mikhailov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 23, co-authored 250 publications receiving 2099 citations. Previous affiliations of Nikolay N. Mikhailov include Tomsk State University & Novosibirsk State University.
Papers
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Journal ArticleDOI
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission
Vladimir Rumyantsev,Vladimir Rumyantsev,A. M. Kadykov,Mikhail A. Fadeev,Alexander A. Dubinov,Alexander A. Dubinov,V. V. Utochkin,V. V. Utochkin,Nikolay N. Mikhailov,Nikolay N. Mikhailov,S. A. Dvoretskii,S. V. Morozov,S. V. Morozov,Vladimir I. Gavrilenko,Vladimir I. Gavrilenko +14 more
TL;DR: The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied in this paper.
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Ion milling-induced conductivity-type conversion in p-type HgCdTe MBE-grown films with graded-gap surface layers
M. Pociask,I. I. Izhnin,Sergey A. Dvoretsky,Yu. G. Sidorov,V. S. Varavin,Nikolay N. Mikhailov,N.H. Talipov,K. D. Mynbaev,A. V. Voitsekhovskii +8 more
TL;DR: In this paper, the effect of the material removal from the surface on the conversion depth of a p-type HgCdTe molecular beam epitaxy-grown films with graded-gap surface layers is studied.
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Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures
Vladimir Rumyantsev,K. V. Maremyanin,Andrey P. Fokin,Alexander A. Dubinov,V. V. Utochkin,M. Yu. Glyavin,Nikolay N. Mikhailov,S. A. Dvoretskii,S. V. Morozov,V. I. Gavrilenko +9 more
TL;DR: The possibility of obtaining intense terahertz radiation due to second-order lattice nonlinearity in indium-phosphide crystals doped with iron is discussed in this paper.
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Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n -HgCdTe ( x = 0.21–0.23)
A. V. Voitsekhovskii,Sergey N. Nesmelov,Stanislav M. Dzyadukh,V. S. Varavin,S. A. Dvoretskii,Nikolay N. Mikhailov,Yu. G. Sidorov,V. V. Vasil’ev,T. I. Zakhar'yash,Yu. P. Mashukov +9 more
TL;DR: In this paper, the voltage, frequency, and temperature dependences of photo-emf are experimentally studied in the MIS HgCdTe/SiO 1−1−x Cd�� x Te films grown by molecular-beam epitaxy on GaAs substrates.
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Defects in Arsenic Implanted р + –n - and n + –p - Structures Based on MBE Grown CdHgTe Films
I. I. Izhnin,E. I. Fitsych,A. V. Voitsekhovskii,A. G. Korotaev,K. D. Mynbaev,V. S. Varavin,Sergey A. Dvoretsky,Sergey A. Dvoretsky,Nikolay N. Mikhailov,M. V. Yakushev,A. Yu. Bonchyk,H. V. Savytskyy,Z. Świątek +12 more
TL;DR: In this paper, the defect structure of arsenic-implanted (with the energy of 190 keV) films grown by molecular-beam epitaxy are carried out using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements.