D
D. V. Marin
Researcher at Russian Academy of Sciences
Publications - 27
Citations - 91
D. V. Marin is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Molecular beam epitaxy & Annealing (metallurgy). The author has an hindex of 5, co-authored 27 publications receiving 62 citations.
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Journal ArticleDOI
Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study
O. Yu. Bonchyk,H. V. Savytskyy,Z. Swiatek,Y. Morgiel,I. I. Izhnin,A. V. Voitsekhovskii,A. G. Korotaev,K. D. Mynbaev,K. D. Mynbaev,O. I. Fitsych,V. S. Varavin,S. A. Dvoretsky,D. V. Marin,M. V. Yakushev +13 more
TL;DR: In this article, the transformation and annihilation of radiation-induced defects were observed as a result of annealing, with the depth with the maximum defect density decreasing from 110 to 40nm.
Journal ArticleDOI
Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
I. I. Izhnin,Ihor I. Syvorotka,O. I. Fitsych,V. S. Varavin,S. A. Dvoretsky,D. V. Marin,N. N. Mikhailov,V. G. Remesnik,M. V. Yakushev,K. D. Mynbaev,A.V. Voitsekhovsky,A. G. Korotaev +11 more
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Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies
K. D. Mynbaev,K. D. Mynbaev,N. L. Bazhenov,S. A. Dvoretsky,N. N. Mikhailov,V. S. Varavin,D. V. Marin,M. V. Yakushev +7 more
TL;DR: In this article, the defect structure of HgCdTe/GaAs films was investigated by performing variable-temperature photoluminescence (PL) measurements. And the post-growth annealing was found to have a positive effect on the defect structures by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgcdTe and Si.
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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm
V. S. Varavin,I. V. Sabinina,G. Yu. Sidorov,D. V. Marin,V. G. Remesnik,A. V. Predein,S. A. Dvoretsky,V. V. Vasilyev,Yu. G. Sidorov,M. V. Yakushev,Anton Latyshev +10 more
TL;DR: In this article, the authors measured the dark currents and photocurrents of p-on-n photodiodes (PD) formed in In-doped MBE-grown n-type mercury cadmium telluride (MCT) films.
Journal ArticleDOI
A Megapixel Matrix Photodetector of the Middle Infrared Range
V. M. Bazovkin,V. S. Varavin,V. V. Vasil’ev,A. V. Glukhov,D. V. Gorshkov,Sergey A. Dvoretsky,A. P. Kovchavtsev,Yu. S. Makarov,D. V. Marin,I. V. Mzhelsky,V. G. Polovinkin,V. G. Remesnik,I. V. Sabinina,Yu. G. Sidorov,G. Yu. Sidorov,A. S. Stroganov,A. V. Tsarenko,M. V. Yakushev,A. V. Latyshev +18 more
TL;DR: In this paper, the characteristics of MWIRs focal plane made in the form of a hybrid chip based on a planar n+p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered.