P
P. Paul Ruden
Researcher at University of Minnesota
Publications - 179
Citations - 5359
P. Paul Ruden is an academic researcher from University of Minnesota. The author has contributed to research in topics: Electron mobility & Field-effect transistor. The author has an hindex of 36, co-authored 178 publications receiving 5068 citations. Previous affiliations of P. Paul Ruden include United States Naval Research Laboratory & Max Planck Society.
Papers
More filters
Journal ArticleDOI
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
Maziar Farahmand,Carlo Garetto,Enrico Bellotti,K. F. Brennan,Michele Goano,E. Ghillino,Giovanni Ghione,John D. Albrecht,P. Paul Ruden +8 more
TL;DR: In this paper, a comprehensive study of the transport dynamics of electrons in the ternary compounds, Al/sub x/Ga/sub 1-x/N and In/sub ng/g/ng/s/n g/n/g n/g 1.x/n, is presented, which includes all of the major scattering mechanisms.
Journal ArticleDOI
Electron transport characteristics of GaN for high temperature device modeling
TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
Journal ArticleDOI
Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
TL;DR: In this article, the ensemble Monte Carlo technique is used to calculate the basic electronic transport properties for both zincblende and wurtzite crystal phases of bulk gallium nitride.
Journal ArticleDOI
Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility
TL;DR: In this article, variable temperature contact resistance measurements on pentacene organic thin-film transistors via a gated four-probe technique are described. But the authors focus on the activation behavior of the source and drain electrodes.
Journal ArticleDOI
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
İsmail H. Oğuzman,İsmail H. Oğuzman,Enrico Bellotti,Kevin F. Brennan,Ján Kolník,R. Wang,P. Paul Ruden +6 more
TL;DR: In this paper, the first calculations of hole initiated interband impact ionization in bulk zincblende and wurtzite phase GaN are presented using an ensemble Monte Carlo simulation including full details of all of the relevant valence bands, derived from an empirical pseudopotential approach, for each crystal type.