Paul W. Marshall

TL;DR: In this article, low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed is presented, and the results show a strong angular dependence, demonstrate that energy straggle, flux attrition, and angular scattering affect the measured SEU cross sections, and prove that proton direct ionization is the dominant mechanism for low energy proton induced SEUs in these circuits.

TL;DR: In this paper, a theory of the circuit-based response to SET phenomena in resonant tank oscillators is presented, where the authors show that the SET amplitude and phase response is time-variant based on the strike time relative to the period of oscillation.

TL;DR: In this paper, the authors compared experimental results for gamma-induced dose fluctuations with theoretical calculations of extreme value distributions, and found that the agreement between theory and experiment is excellent, in order to predict correctly the variance in the dose distribution from the basic model for solid-state imagers, it is necessary in the case of a charge injection device (CID) to include a term for carrier diffusion.

TL;DR: In this paper, a Wide Field Camera 3 (WFC3) CCD detector was tested for radiation effects while operating at -83°C. The detector has a format of 2048 x 2048 pixels with a 15 μm square pixel size, a supplemental buried channel, an MPP implant, and is back side illuminated.

TL;DR: In this article, the proton radiation tolerance of a 035 /spl mu/m SOI technology on UNIBOND material was investigated and the radiation response was characterized by threshold-voltage shifts of the front-gate and back-gate transistors.