Journal ArticleDOI
Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND
Ying Li,Guofu Niu,John D. Cressler,J. Patel,Paul W. Marshall,Hyun-Chul Kim,M.S.T. Liu,Robert A. Reed,M.J. Palmer +8 more
TLDR
In this article, the proton radiation tolerance of a 035 /spl mu/m SOI technology on UNIBOND material was investigated and the radiation response was characterized by threshold-voltage shifts of the front-gate and back-gate transistors.Abstract:
We investigate the proton radiation tolerance of a 035 /spl mu/m SOI technology on UNIBOND material The radiation response is characterized by threshold-voltage shifts of the front-gate and back-gate transistors An increase of the front-gate threshold voltage is observed on the n-channel MOSFETs after irradiation and is attributed to radiation-induced interface states at the front-gate oxide/silicon interface A double g/sub m/ peak behavior is observed on the back-gate g/sub m/-V/sub GS/ curves for both n- and p-channel MOSFETs and is attributed to silicon/back-gate oxide interface traps with a delta-function-like distribution in the energy gap The results suggest this 035 /spl mu/m technology on UNIBOND material performs well in a proton-radiation environmentread more
Citations
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Journal ArticleDOI
Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation
TL;DR: In this article, the impact of ionizing irradiation on the static, transient and low-frequency noise characteristics of deep submicron partially depleted (PD) silicon-on-insulator (SOI) transistors is discussed.
Journal ArticleDOI
Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
Kiyoteru Hayama,Kenichiro Takakura,H. Ohyama,Joan Marc Rafi,Abdelkarim Mercha,Eddy Simoen,Corneel Claeys,M. Kokkoris +7 more
TL;DR: In this paper, the degradation of deep submicron (0.1 /spl mu/m) fully depleted (FD)-silicon-on-insulator (SOI) n-channel metal oxide semiconductor field effect transistors (MOSFETs) subjected to 7.5-MeV proton irradiation is reported.
Journal ArticleDOI
The effect of charge collection recovery in silicon p–n junction detectors irradiated by different particles
E. M. Verbitskaya,M.C. Abreu,P. Anbinderis,T. Anbinderis,Nicola D'Ambrosio,W. De Boer,E. Borchi,K. Borer,Mara Bruzzi,Salvatore Buontempo,L. Casagrande,Wen-Chang Chen,Vladimir Cindro,B. Dezillie,Alexander Dierlamm,V. K. Eremin,Eugenijus Gaubas,V. Gorbatenko,V. Granata,E. Grigoriev,E. Grigoriev,S. Grohmann,F. Hauler,Erik H.M. Heijne,S. Heising,O. Hempel,R. Herzog,Jaakko Härkönen,I. Ilyashenko,S. Janos,L. Jungermann,V. Kalesinskas,J. Kapturauskas,R. Laiho,Z. Li,Igor Mandić,Rita De Masi,David Menichelli,Marko Mikuz,Otilia Militaru,T. O. Niinikoski,Val O'Shea,Sergio Pagano,V.G. Palmieri,S. Paul,B. Perea Solano,Krzysztof Piotrzkowski,S. Pirollo,Klaus Peter Pretzl,P. Rato Mendes,G. Ruggiero,Kevin M. Smith,P. Sonderegger,P. Sousa,Eija Tuominen,J. Vaitkus,C. Da Via,E. Wobst,M. Zavrtanik +58 more
TL;DR: In this paper, the Lazarus effect was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays.
Journal ArticleDOI
The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI
Anuj Madan,R. Verma,Rajan Arora,Edward P. Wilcox,John D. Cressler,Paul W. Marshall,Ronald D. Schrimpf,Peter F. Cheng,L. Del Castillo,Qingqing Liang,Gregory G. Freeman +10 more
TL;DR: In this paper, the authors analyzed the effects of shallow-trench isolation on ionizing radiation response of 65 nm Silicon-On-Insulator (SOI) CMOS technology and showed that body-contacting schemes which eliminate sidewalls (e.g., H-body, T-body) will provide the necessary total-dose radiation tolerance for multi-finger analog and RF devices, without additional hardening techniques.
Journal ArticleDOI
Accurate Monte Carlo modeling and performance assessment of the X-PET subsystem of the FLEX triumph preclinical PET/CT scanner.
TL;DR: The developed MC simulation platform provides a reliable tool for performance evaluation of small animal PET scanners and has the potential to be used in other applications such as detector design optimization, correction of image degrading factors such as randoms, scatter, intercrystal scatter, parallax error, and partial volume effect.
References
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Journal ArticleDOI
Particle-induced bit errors in high performance fiber optic data links for satellite data management
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Journal ArticleDOI
A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
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