Paul W. Marshall

TL;DR: In this paper, the authors present data on recent optocoupler in-flight anomalies and the subsequent ground test irradiation performed, and discuss the single event mechanisms involved, transient filtering analysis, and design implications.

TL;DR: In this article, a new circuit-level single-event upset (SEU) hardening approach for high-speed SiGe HBT current-steering digital logic is introduced and analyzed using both device and circuit simulations.

TL;DR: In this article, a heavily doped p-type charge blocking buried layer in the substrate can reduce the delayed charge collection from events that occur outside the deep trench isolation by almost an order of magnitude.

TL;DR: In this paper, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz was investigated through comparisons of the pre-and post-radiation ac and dc figures-of-merit to observed results from prior SiGe HBT technology nodes irradiated under identical conditions.

TL;DR: In this paper, the authors investigated transistor-level layout-based techniques for SEE mitigation in advanced SiGe HBTs, which is based on the inclusion of an alternate reverse-biased pn junction (n-ring) designed to shunt electron charge away from the sub-collector to substrate junction.