P
Philippe Boucaud
Researcher at Centre national de la recherche scientifique
Publications - 248
Citations - 5751
Philippe Boucaud is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Photoluminescence & Photonic crystal. The author has an hindex of 40, co-authored 248 publications receiving 5307 citations. Previous affiliations of Philippe Boucaud include University of Paris & University of Paris-Sud.
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Dynamical twisted mass fermions with light quarks: simulation and analysis details
Philippe Boucaud,Petros Dimopoulos,Federico Farchioni,Roberto Frezzotti,V. Gimenez,Gregorio Herdoiza,Karl Jansen,Vittorio Lubicz,Chris Michael,Gernot Münster,D. Palao,Giancarlo Rossi,Luigi Scorzato,Andrea Shindler,Silvano Simula,Tobias Sudmann,Carsten Urbach,Urs Wenger +17 more
TL;DR: The problem of tuning to maximal twist, the techniques the authors have used to compute correlators and error estimates, and the evaluation of disconnected contributions and the description of the data by means of chiral perturbation theory formulae are discussed.
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Light hadrons from lattice QCD with light (u,d), strange and charm dynamical quarks
Remi Baron,Philippe Boucaud,J. Carbonell,Albert Deuzeman,Vincent Drach,Federico Farchioni,V. Gimenez,Gregorio Herdoiza,Karl Jansen,Craig McNeile,Chris Michael,Istvan Montvay,D. Palao,Elisabetta Pallante,Olivier Pene,S. Reker,Carsten Urbach,Marc Wagner,Urs Wenger +18 more
TL;DR: In this paper, the authors present results of lattice QCD simulations with mass-degenerate up and down and mass-split strange and charm (N_f = 2+1+1) dynamical quarks using Wilson twisted mass fermions at maximal twist.
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Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
TL;DR: In this paper, the authors investigated the band structure of tensile-strained germanium using a 30 band k⋅p formalism and obtained that the crossover from indirect to direct band gap occurs for a tensile in-plane strain of 1.9%.
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more
TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.
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Control of direct band gap emission of bulk germanium by mechanical tensile strain
M. El Kurdi,H. Bertin,Emile Martincic,M. de Kersauson,Guy Fishman,Sébastien Sauvage,Alain Bosseboeuf,Philippe Boucaud +7 more
TL;DR: In this paper, the recombination energy of the direct band gap photoluminescence (PL) of germanium can be controlled by an external mechanical stress provided by an apparatus commonly used for bulge or blister test.