N
Nils von den Driesch
Researcher at RWTH Aachen University
Publications - 6
Citations - 261
Nils von den Driesch is an academic researcher from RWTH Aachen University. The author has contributed to research in topics: Lasing threshold & Heterojunction. The author has an hindex of 3, co-authored 6 publications receiving 150 citations. Previous affiliations of Nils von den Driesch include Forschungszentrum Jülich.
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Journal ArticleDOI
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more
TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.
Journal ArticleDOI
GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
Daniela Stange,Nils von den Driesch,Nils von den Driesch,T. Zabel,Francesco Armand-Pilon,Denis Rainko,Bahareh Marzban,Peter Zaumseil,J. M. Hartmann,Zoran Ikonic,Giovanni Capellini,Siegfried Mantl,Hans Sigg,Jeremy Witzens,Detlev Grützmacher,Dan Buca +15 more
TL;DR: In this article, the authors investigate GeSn/SiGeSn multi quantum wells using the optically pumped laser effect and show that the design with multi quantum well reduces the lasing threshold to 40 ± 5 kW/cm2 at 20 K, almost 10 times lower than for bulk structures.
Journal ArticleDOI
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
Nils von den Driesch,Nils von den Driesch,Daniela Stange,Denis Rainko,Uwe Breuer,Giovanni Capellini,Jean-Michel Hartmann,Hans Sigg,Siegfried Mantl,Detlev Grützmacher,Detlev Grützmacher,Dan Buca +11 more
TL;DR: In this article, the epitaxy of group IV GeSn and SiGeSn semiconductors is discussed and double and multi quantum well heterostructures are evaluated, whereby the latter enables an inherently easier control over the formation of deleterious misfit defects.
Journal ArticleDOI
Structural Property Study for GeSn Thin Films
Liyao Zhang,Yuxin Song,Nils von den Driesch,Zhenpu Zhang,Dan Buca,Detlev Grützmacher,Shumin Wang +6 more
TL;DR: The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge by molecular beam epitaxy and on Ge-buffered Si wafers by CVD were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy.
Journal ArticleDOI
Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact
Mingshan Liu,Konstantin Mertens,Nils von den Driesch,Nils von den Driesch,Viktoria Schlykow,Thomas Grap,Florian Lentz,Stefan Trellenkamp,Jean-Michel Hartmann,Joachim Knoch,Dan Buca,Qing-Tai Zhao +11 more
TL;DR: In this article, a top-down approach was used to construct gate-all-around (GAA) nanowire pMOSFETs with optimized processes and a decent ION/IOFF ratio.