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Anas Elbaz
Researcher at STMicroelectronics
Publications - 4
Citations - 302
Anas Elbaz is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Lasing threshold & Photonics. The author has an hindex of 3, co-authored 4 publications receiving 181 citations. Previous affiliations of Anas Elbaz include Centre national de la recherche scientifique & Université Paris-Saclay.
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Journal ArticleDOI
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more
TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.
Journal ArticleDOI
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Anas Elbaz,Dan Buca,N. von den Driesch,K. Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,S. Sauvage,I. Sagnes,Antonino Foti,Razvigor Ossikovski,J.M. Hartmann,Frederic Boeuf,Zoran Ikonic,P. Boucaud,Detlev Grützmacher,M. El Kurdi +17 more
TL;DR: In this article, a 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band gap semiconductor.
Journal ArticleDOI
Germanium microlasers on metallic pedestals
Anas Elbaz,Anas Elbaz,M. El Kurdi,Abdelhanin Aassime,Sébastien Sauvage,Xavier Checoury,Isabelle Sagnes,Charles Baudot,Frederic Boeuf,Philippe Boucaud +9 more
TL;DR: In this paper, a tensile-strained germanium microdisks have been fabricated with metallic pedestals, and the transferred tensile strain leads to a thin film with a direct bandgap.
Journal ArticleDOI
Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities
Moustafa El Kurdi,Anas Elbaz,Anas Elbaz,Binbin Wang,Emilie Sakat,Etienne Herth,Gilles Patriarche,Konstantinos Pantzas,Isabelle Sagnes,Sébastien Sauvage,Xavier Checoury,Alexei Chelnokov,Vincent Reboud,Jérémie Chrétien,Nicolas Pauc,Vincent Calvo,Frederic Boeuf,Philippe Boucaud,Nils von den Driesch,Detlev Grützmacher,Jean-Michel Hartmann,Dan Buca +21 more
TL;DR: In this paper, the authors show that combining tensile strain and Sn alloying can effective engineer the material band structure and its optical gain properties, and also evidence the importance of defects management on GeSn lasing characteristics, beyond the band structure engineering.