P
Pragya Kushwaha
Researcher at University of California, Berkeley
Publications - 63
Citations - 948
Pragya Kushwaha is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: BSIM & MOSFET. The author has an hindex of 14, co-authored 58 publications receiving 578 citations. Previous affiliations of Pragya Kushwaha include Indian Space Research Organisation & Indian Institute of Technology Kanpur.
Papers
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Journal ArticleDOI
Non-Boolean Associative Processing Using FDSOI MOSFET-Based Inverter
TL;DR: Fully depleted silicon-on-insulator (FDSOI) MOSFET-based inverter is used as a distance computing cell (DCC) for non-Boolean associative processing system that shows excellent controllability of current characteristics of DCC.
Proceedings ArticleDOI
Impact of substrate on the frequency behavior of trans-conductance in ultrathin body and BOX FDSOI MOS devices - a physical insight
TL;DR: In this paper, the authors have reported an increase in small signal trans-conductance (g m ) with increase in frequency because of this coupling, which is modulated by changing the substrate doping and BOX thickness.
Proceedings ArticleDOI
Modeling the Quantum Gate capacitance of Nano-Sheet Gate-All-Around MOSFET
Pragya Kushwaha,Harshit Agarwal,Varun Mishra,Avirup Dasgupta,Yen-Kai Lin,Ming-Yen Kao,Yogesh Singh Chauhan,Sayeef Salahuddin,Chenming Hu +8 more
TL;DR: In this article, a unified phenomenological model for insulator capacitance in rectangular (i.e., Nanosheet) cross-section gate-all-around (GAA) FET was developed to solve the gate charge density accurately.
Proceedings ArticleDOI
A width-scalable SPICE compact model for GaN HEMTs including self-heating effect
Raghvendra Dangi,Ahtisham Pampori,Pragya Kushwaha,Ekta Yadav,Santanu Sinha,Yogesh Singh Chauhan +5 more
TL;DR: In this article , the authors present a complete SPICE model capable of emulating the geometry-dependent self-heating behavior using a single model card, which is valid for a narrow range of geometries and are not scalable in the truest sense.
Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures
Mohammad Sajid Nazir,Pragya Kushwaha,Ahtisham Pampori,Sheikh Aamir Ahsan,Yogesh Singh Chauhan +4 more
TL;DR: In this article , the authors present a phenomenological cryogenic model for gallium nitride (GaN) high electron mobility transistors (HEMTs) with validity all the way down to a temperature of 10 K.