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Technical manual : 日本語版

This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during both dc and small signal analysis, thus giving excellent results during analog and RF circuit simulations, e.g., harmonic balance simulation. The model is fully scalable with geometry, biases, and temperature. The model has a physical charge-based capacitance model including polydepletion and quantum-mechanical effect thereby giving accurate results in small signal and transient simulations. The BSIM6 model has been extensively validated with industry data from 40-nm technology node.

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Ferroelectric Negative Capacitance Field Effect Transistor

We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO2 gate oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When compared to a baseline that uses HfO2 gate oxide with the same thickness, a subthreshold swing (SS) steeper by more than 20 mV/decade and larger than 10X reduction in the OFF current ( ${I}_{ \mathrm{OFF}}$ ) is observed at 30-nm channel length at constant ${I}_{ \mathrm{\scriptscriptstyle ON}}$ . On the other hand, at matched ${I} _{ \mathrm{\scriptscriptstyle OFF}}$ , the NCFET provides a larger ON current at constant ${V}_{\mathrm {DD}}$ . Our results indicate that the beneficial characteristic offered by the NCFETs can be obtained at scaled channel lengths, while using oxide layers whose thickness is comparable to the high- ${K}$ oxide layer used in ultra-scaled nodes.

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO 2 Oxide

Here, we report high voltage MOSFET modeling using BSIM6 model. The model has two components - intrinsic MOSFET channel of LDMOS modeled by BSIM6 and a drift region modeled by non-linear drift resistance. BSIM6 is the next generation bulk MOSFET model in BSIM family of models. It also have the model of Self Heating Effect (SHE) which is very important for high power devices like LDMOS. This model shows good behaviour over wide range of gate and drain bias conditions including convergence. Some of the effects like Quasi-saturation, self-heating and impact ionization are modelled by the combination of BSIM6 and drift-resistance models. We have validated this model on the simulated characteristics generated by TCAD and then, on the measured characteristics of a LDMOS device, where it shows excellent accuracy over entire bias range.

High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz–8.5GHz.

BSIM-IMG: Compact model for RF-SOI MOSFETs

The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1] . The transistor’s characteristics are dominated by substrate parasitics at intermediate frequencies (0.1–10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.

Modeling of Advanced RF Bulk FinFETs

A complete simulation framework is presented for Negative Capacitance FinFETs including Numerical Simulation, Compact Modeling, and Circuit Evaluation. A 2D Numerical Simulation for FinFETs coupled with the Landau’s Ferroelectric Model captures device characteristics. A new version of the distributed Negative-Capacitance FinFET Compact Model is also presented in this work, where influence of short-channel effects in Ferroelectric voltage amplification are newly incorporated. Finally, a detailed analysis, from an energy perspective, is presented for the gate voltage amplification of Negative Capacitance FinFETs in ring-oscillator circuits.

Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation

In this paper, a behavioral model of threshold voltage for normally-off (enhancement mode) AlGaN/GaN based tri-gate HEMT is proposed. AlGaN/GaN based tri-gate HEMT devices have additional sidewall gates and show threshold voltage variation with decreasing device width. The proposed model captures strain relaxation with reduction in device width, which is one of the primary reason for change in V th in AlGaN/GaN tri-gate devices. Model shows excellent agreement with state-of-the-art experimental and simulation data.

Pragya Kushwaha

Papers

High voltage LDMOSFET modeling using BSIM6 as intrinsic-MOS model

BSIM-IMG: Compact model for RF-SOI MOSFETs

Modeling of Advanced RF Bulk FinFETs

Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation

Threshold voltage modeling of GaN based normally-off tri-gate transistor