R
R. Armitage
Researcher at University of California, Berkeley
Publications - 27
Citations - 1045
R. Armitage is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Epitaxy & Light-emitting diode. The author has an hindex of 11, co-authored 18 publications receiving 995 citations. Previous affiliations of R. Armitage include Lawrence Berkeley National Laboratory.
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Switchable mirrors based on nickel–magnesium films
TL;DR: A new type of electrochromic mirror electrode based on reversible uptake of hydrogen in nickel magnesium alloy films is reported in this paper, where a thin overlayer of palladium was found to enhance the kinetics of hydrogen insertion and extraction, and to protect the metal surface against oxidation.
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Effects of electron concentration on the optical absorption edge of InN
Junqiao Wu,Wladek Walukiewicz,S. X. Li,R. Armitage,Johnny C. Ho,Eicke R. Weber,Eugene E. Haller,Hai Lu,William J. Schaff,Adam Barcz,Rafal Jakiela +10 more
TL;DR: In this article, the optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap.
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Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
R. Armitage,W. Hong,Qing Yang,H. Feick,J. Gebauer,Eicke R. Weber,S. Hautakangas,Kimmo Saarinen +7 more
TL;DR: In this paper, carbon-doped GaN layers were studied with photoluminescence and positron annihilation spectroscopy and it was shown that there is a causal relationship between carbon and the 2.2 eV band.
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Lattice-matched HfN buffer layers for epitaxy of GaN on Si
TL;DR: Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 (mu)m as discussed by the authors.
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Solid-state gadolinium–magnesium hydride optical switch
TL;DR: In this paper, the optical switching properties of gadolinium-magnesium hydride have been demonstrated in a solid-state electrochromic device, where the visible reflectance approaches 35% with virtually zero transmission.