R
R. Gassilloud
Researcher at Commissariat à l'énergie atomique et aux énergies alternatives
Publications - 20
Citations - 299
R. Gassilloud is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 8, co-authored 19 publications receiving 232 citations.
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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
TL;DR: In this article, a new route for a selective deposition of thin oxide by atomic layer deposition is discussed, which is using super cycles made of an additional plasma etching step in a standard plasma enhanced atomic layer deblurring (PEALD) process.
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Parallel angle resolved XPS investigations on 12in. wafers for the study of W and WSix oxidation in air
Bernard Pelissier,A. Beaurain,Jean-Paul Barnes,R. Gassilloud,François Martin,Olivier Joubert +5 more
TL;DR: Parallel angle resolved X-ray photoelectron spectroscopy (ARXPS) was used to study the oxidation of W and WSi"x thin films CVD-deposited on 12in. silicon wafers.
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Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
Rémi Vallat,R. Gassilloud,Olivier Salicio,Khalil El Hajjam,Gabriel Molas,Bernard Pelissier,Christophe Vallée,Christophe Vallée +7 more
TL;DR: In this article, a modified plasma enhanced atomic layer deposition (PEALD) sequence was developed in a modified PEALD-TiO2 sequence for bottom-up approach, where the metal oxide selectivity was obtained on TiN versus Si-based surfaces by adding one etching/passivation plasma step of fluorine every n cycles in a PEALD TiO2 process.
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Hybrid-RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions
Gilbert Sassine,Cecile Nail,Philippe Blaise,Benoit Sklenard,Mathieu Bernard,R. Gassilloud,Aurélie Marty,Marc Veillerot,Christophe Vallée,Etienne Nowak,Gabriel Molas +10 more
TL;DR: In this paper, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide-based CBRAM (Hybrid RRAM) performances is investigated, and a new RRAM classification correlating filament composition and memory performances is proposed.
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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition
Christophe Vallée,Christophe Vallée,M. Bonvalot,Samia Belahcen,Taguhi Yeghoyan,Moustapha Jaffal,Rémi Vallat,Ahmad Chaker,Ahmad Chaker,Gautier Lefèvre,Sylvain David,Ahmad Bsiesy,Nicolas Posseme,R. Gassilloud,Agnès Granier +14 more
TL;DR: In this paper, the role of ionic species in plasma assisted chemical deposition processes is discussed in detail for commemorating the Career of John Coburn, who studied the role in plasma etching processes forty years ago, and the possibility of extracting plasma ions with a tunable incident kinetic energy driven on the substrate surface is shown to provide a valuable additional degree of freedom in plasma processing.