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Rémi Vallat

Researcher at University of Grenoble

Publications -  5
Citations -  300

Rémi Vallat is an academic researcher from University of Grenoble. The author has contributed to research in topics: Atomic layer deposition & Plasma etching. The author has an hindex of 5, co-authored 5 publications receiving 252 citations. Previous affiliations of Rémi Vallat include University of Montpellier.

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A bifunctional luminescent single-ion magnet: towards correlation between luminescence studies and magnetic slow relaxation processes.

TL;DR: A new heterodinuclear [Zn(L)Dy](3+) complex, with L being a compartmental Schiff base ligand, exhibits the characteristic Dy(3+) luminescence associated with a single-ion field induced slow relaxation of the magnetisation.
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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

TL;DR: In this article, a new route for a selective deposition of thin oxide by atomic layer deposition is discussed, which is using super cycles made of an additional plasma etching step in a standard plasma enhanced atomic layer deblurring (PEALD) process.
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Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

TL;DR: In this article, a modified plasma enhanced atomic layer deposition (PEALD) sequence was developed in a modified PEALD-TiO2 sequence for bottom-up approach, where the metal oxide selectivity was obtained on TiN versus Si-based surfaces by adding one etching/passivation plasma step of fluorine every n cycles in a PEALD TiO2 process.
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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

TL;DR: In this paper, the role of ionic species in plasma assisted chemical deposition processes is discussed in detail for commemorating the Career of John Coburn, who studied the role in plasma etching processes forty years ago, and the possibility of extracting plasma ions with a tunable incident kinetic energy driven on the substrate surface is shown to provide a valuable additional degree of freedom in plasma processing.
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Topographically selective deposition

TL;DR: In this paper, a topographically selective deposition (PSD) process is proposed for 3D nano-structures. But the process is based on the alternate use of plasma enhanced atomic layer deposition (PEALD) and sputtering carried out in a PEALD reactor equipped with a radio-frequency substrate biasing kit.