F
François Martin
Researcher at Centre national de la recherche scientifique
Publications - 235
Citations - 5506
François Martin is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: High-κ dielectric & Gate oxide. The author has an hindex of 36, co-authored 226 publications receiving 5145 citations. Previous affiliations of François Martin include University of Paris & University of Grenoble.
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Journal ArticleDOI
Oxidation state and coordination of Fe in minerals: An Fe K-XANES spectroscopic study
Max Wilke,François Farges,François Farges,Pierre-Emmanuel Petit,Gordon E. Brown,François Martin +5 more
TL;DR: In this paper, the authors measured high-resolution Fe K-edge XANES spectra of a series of crystalline Fe 2+ - and Fe 3+ -bearing model compounds in an effort to correlate characteristics of the pre-edge feature with oxidation state and local coordination environment of Fe atoms.
Journal ArticleDOI
HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy
O. Renault,D. Samour,J.-F. Damlencourt,D. Blin,François Martin,S. Marthon,Nicholas Barrett,P. Besson +7 more
TL;DR: In this article, high energy resolution (0.15 eV) along with high brightness level allows us to separate, unambiguously, on both Hf 4f and Si 2p core-level spectra, interfacial Hf-silicate bonds from bulk HfO2 and SiO2 contributions, thus making possible subsequent quantitative treatments and modeling of the interfacial layer structure.
Proceedings ArticleDOI
Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond
O. Faynot,Francois Andrieu,Olivier Weber,Claire Fenouillet-Beranger,Pierre Perreau,J. Mazurier,T. Benoist,O. Rozeau,Thierry Poiroux,Maud Vinet,Laurent Grenouillet,J.-P. Noel,Nicolas Posseme,Sébastien Barnola,François Martin,C. Lapeyre,Mikael Casse,X. Garros,M-A. Jaud,Olivier P. Thomas,G. Cibrario,L. Tosti,L. Brevard,Claude Tabone,P. Gaud,Sylvain Barraud,Thomas Ernst,Simon Deleonibus +27 more
TL;DR: In this article, the main advantages of planar undoped channel Fully depleted SOI devices are discussed and solutions to the Multiple V T challenges and non logic devices (ESD, I/Os) are reported.
Journal ArticleDOI
Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters
M. Casse,L. Thevenod,Bernard Guillaumot,L. Tosti,François Martin,J. Mitard,Olivier Weber,Francois Andrieu,Thomas Ernst,Gilles Reimbold,Thierry Billon,Mireille Mouis,F. Boulanger +12 more
TL;DR: In this article, the effect of remote coulomb scattering (RCS) due to fixed charges or dipoles on electron and hole mobility in HfO/sub 2/metal gate MOSFETs was studied through low-temperature measurements.
Journal ArticleDOI
The effect of organic matter on chemical weathering: study of a small tropical watershed: nsimi-zoétélé site, cameroon
Priscia Oliva,Jérôme Viers,Bernard Dupré,Jean Pôl Fortuné,François Martin,Jean-Jacques Braun,Daniel Nahon,Henri Robain +7 more
TL;DR: In this paper, chemical analysis performed on water samples collected monthly from different localities between 1994-1997 and on soil samples taken during a well drilling in December 1997 showed that a significant amount of Al does not leave the system due to kaolinite recrystallisation in the swamp zone soils.