N
Nicolas Posseme
Researcher at University of Grenoble
Publications - 165
Citations - 1359
Nicolas Posseme is an academic researcher from University of Grenoble. The author has contributed to research in topics: Layer (electronics) & Etching (microfabrication). The author has an hindex of 19, co-authored 157 publications receiving 1213 citations. Previous affiliations of Nicolas Posseme include French Alternative Energies and Atomic Energy Commission & Applied Materials.
Papers
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Proceedings ArticleDOI
Planar Fully depleted SOI technology: A powerful architecture for the 20nm node and beyond
O. Faynot,Francois Andrieu,Olivier Weber,Claire Fenouillet-Beranger,Pierre Perreau,J. Mazurier,T. Benoist,O. Rozeau,Thierry Poiroux,Maud Vinet,Laurent Grenouillet,J.-P. Noel,Nicolas Posseme,Sébastien Barnola,François Martin,C. Lapeyre,Mikael Casse,X. Garros,M-A. Jaud,Olivier P. Thomas,G. Cibrario,L. Tosti,L. Brevard,Claude Tabone,P. Gaud,Sylvain Barraud,Thomas Ernst,Simon Deleonibus +27 more
TL;DR: In this article, the main advantages of planar undoped channel Fully depleted SOI devices are discussed and solutions to the Multiple V T challenges and non logic devices (ESD, I/Os) are reported.
Proceedings ArticleDOI
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
Sylvain Barraud,V. Lapras,M.-P. Samson,L. Gaben,Laurent Grenouillet,V. Maffini-Alvaro,Yves Morand,J. Daranlot,N. Rambal,B. Previtalli,Shay Reboh,Claude Tabone,R. Coquand,E. Augendre,Olivier Rozeau,J.M. Hartmann,C. Vizioz,Christian Arvet,Patricia Pimenta-Barros,Nicolas Posseme,Virginie Loup,C. Comboroure,C. Euvrard,V. Balan,I. Tinti,G. Audoit,Nicolas Bernier,David Cooper,Zineb Saghi,F. Allain,A. Toffoli,O. Faynot,Maud Vinet +32 more
TL;DR: In this article, vertically stacked horizontal Si nano-wire (NW) /-MOSFETs fabricated with a replacement metal gate (RMG) process are integrated with inner spacers and SiGe source-drain (S/D) stressors.
Journal ArticleDOI
Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas
TL;DR: In this paper, the impact of oxidizing and reducing ash chemistries on the modifications of two porous SiOCH films with varied porosities (8% [low porosity (lp)-SiOCH] and 45% [high porosity(hp)-siOCH]).
Journal ArticleDOI
Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium
TL;DR: In this article, the authors proposed an alternative etching process based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the nonmodified material.
Journal ArticleDOI
Etching mechanisms of low-k SiOCH and selectivity to SiCH and SiO2 in fluorocarbon based plasmas
TL;DR: In this paper, the etch mechanisms of SiOCH, SiO2 and SiCH in fluorocarbon plasmas were investigated. But, the authors did not consider the effect of the thickness of the fluoroccarbon layer.