R
Ramesh Vaddi
Researcher at SRM University
Publications - 62
Citations - 600
Ramesh Vaddi is an academic researcher from SRM University. The author has contributed to research in topics: Subthreshold conduction & CMOS. The author has an hindex of 11, co-authored 56 publications receiving 518 citations. Previous affiliations of Ramesh Vaddi include International Institute of Information Technology & Padmasri Dr. B. V. Raju Institute of Technology.
Papers
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Journal ArticleDOI
Device and Circuit Co-Design Robustness Studies in the Subthreshold Logic for Ultralow-Power Applications for 32 nm CMOS
TL;DR: In this article, the effect of variations of different device and environmental parameters like gate oxide thickness, channel length, threshold voltage, supply voltage, temperature, and reverse body bias on sub-threshold circuit performance for 32 nm bulk CMOS.
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Tunnel FET RF Rectifier Design for Energy Harvesting Applications
TL;DR: The capability of obtaining a high PCE at a low RF input power range reveals the superiority of the HTFET RF rectifiers for battery-less energy harvesting applications.
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Device and circuit design challenges in the digital subthreshold region for ultralow-power applications
TL;DR: This paper identifies the suitable candidates for subthreshold operation at device and circuit levels for optimal subth threshold circuit design and provides an effective roadmap for digital designers interested to work with ultra low-power applications.
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The Shuttle Nanoelectromechanical Nonvolatile Memory
TL;DR: In this article, the authors presented the structure, operation, and modeling of a nanoelectromechanical NVM based on the switching of a free electrode between two stable states.
Proceedings ArticleDOI
Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier
TL;DR: In this paper, the performance of the TFET based differential drive rectifier is evaluated with the state-of-the-art passive RFID and the 10-stage optimized TFET rectifier at 915 MHz.