Showing papers by "Raquel Giulian published in 2021"
TL;DR: In this paper, the status of ion implantation in β-Ga2O3 is reviewed and the results of experimental study of damage under ion irradiation and the properties of Ga 2O3 layers doped by ion implantations are discussed.
Abstract: Gallium oxide, and in particular its thermodynamically stable β-Ga2O3 phase, is within the most exciting materials in research and technology nowadays due to its unique properties The very high breakdown electric field and the figure of merit rivaled only by diamond have tremendous potential for the next generation “green” electronics enabling efficient distribution, use, and conversion of electrical energy Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices Here, the status of ion implantation in β-Ga2O3 nowadays is reviewed Attention is mainly paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation The results of ab initio theoretical calculations of the impurities and defect parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted The use of ion implantation in the development of Ga2O3-based devices, such as metal oxide field-effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics Finally, the most important challenges to be overcome in this field of science and technology are discussed
37 citations
TL;DR: In this article, the first-step in anodization is Ti-oxidation that occurs momentarily; thereby, the oxidation/dissolution dominancy of anodisation in later stages impeded V-structural doping even for varying times (1−24h) and voltages (6−60 V).
6 citations
TL;DR: Grazing incidence X-ray diffraction analysis showed the formation of a polycrystalline compound structure with a zinc blende phase for all of the In(1-x)Al(x)Sb films.
3 citations
TL;DR: In this article, the local and extended atomic structure of In(1-x)Al(x)Sb films were investigated through extended x-ray absorption fine structure (EXAFS) spectroscopy and grazing incidence xray diffraction (GIXRD) analyses.
2 citations
TL;DR: Extended x-ray absorption fine structure spectroscopy was used to investigate the neighborhood of In and Sb atoms in InSb films deposited by magnetron sputtering and subsequently irradiated with 14 MeV Au+6 ions at room temperature, with ion fluences ranging from 1.5 to 2.4 cm−2.
1 citations
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TL;DR: In this article, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed, and the main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O 3 layers doped by ion implantation.
Abstract: Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.